Interaction of Al_3Ta Intermetallic Compound Film with Si : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
The interaction of deposited AL_3Ta intermetallic compound film with a silicon substrate is studied by Auger electron spectroscopy in order to examine the suitability of film for use instead of aluminum as a metallization material. Penetration of aluminum into silicon and formation of aluminum spikes are completely blocked by a thin interfacial layer consisting of Ta and Si formed at the interface between Al_3Ta and silicon. It is revealed that Al_3Ta film is a useful material as a high-quality metallization for silicon devices.
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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UMEZAWA Tomokazu
Faculty of Science and Technology,Keio University
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UMEZAWA Toshiji
Department of Electronic Engineering, Faculcy of Engineering, Kitami Institute of Technology
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Umezawa T
Teijin Ltd. Hiroshima Jpn
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