Preparation of Thin-Film Capacitor with High Reliability by Anodization of Zr–Al Alloy Film
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概要
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We have prepared Zr–Al thin-film capacitors by anodizing a sputter-deposited Zr–Al alloy film with 46 at. % Al, and examined their properties before and after heat treatment and their leakage current mechanism. In addition, anodized Zr–Al films were characterized by X-ray diffraction (XRD) analysis and Auger electron spectroscopy (AES). It is revealed that the reliability of an anodized pure-Zr capacitor is markedly improved by substituting the anodized Zr–Al film for anodized pure-Zr, because the crystallization of anodized Zr–Al amorphous films hardly occurs. In addition, it is clarified that the leakage current mechanism of the anodized Zr–Al capacitor is due to Schottky emission and that the thermal degradation observed after heat treatment above 350 °C is triggered by the diffusion of Zr atoms from the underlying unoxidized alloy layer into the anodized Zr–Al layer.
- 2007-08-15
著者
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Yanagisawa Hideto
Department Of Electrical And Electronic Engineering Kitami Institute Of Technology
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Mikuni Naohiro
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Yamane Misao
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Shibata Tomoharu
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Shinkai Satoko
Center for Microelectronic System, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
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