Epitaxial Growth of (001)Rh Thin Film on (001)MgO Single-Crystal Substrate by Sputtering
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概要
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We have expected that (001)Rh films with a thickness of 100 nm can be grown epitaxially on (001)MgO, because the lattice mismatch between the two-dimensional superlattice cells consisting of $11\times 11$ unit cells of (001)Rh and $10\times 10$ unit cells of (001)MgO is small. Thus, the effects of substrate temperature ($T_{\text{s}}$) on the crystal quality, surface morphology and resistivity of sputtered Rh films were studied. As a result, it is revealed that the (001)Rh films are grown epitaxially on (001)MgO at $T_{\text{s}}=500$°C with the relationship of $\text{Rh(001)[110]}\parallel\text{MgO(001)[110]}$. In addition, the average surface roughness of the epitaxially grown (001)Rh films is 0.28 nm, and a minimum resistivity of 4.9 μ$\Omega$ cm is obtained.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
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KATO Kiyohiko
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Abe Yoshio
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Abe Yoshio
Department of Materials Science and Engineering, Kitami Institute of Technology, Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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