Preparation of Hydrogen-Containing Ta2O5 Thin Films by Reactive Sputtering Using $\text{O$_{2}$}+\text{H$_{2}$O}$ Mixed Gas
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概要
- 論文の詳細を見る
Hydrogen-containing tantalum oxide (Ta2O5) thin films are considered to be a candidate for proton-conducting solid-oxide electrolytes. Hydrogen-containing Ta2O5 thin films were prepared by reactively sputtering a Ta metal target in $\text{O$_{2}$}+\text{H$_{2}$O}$ mixed gas. The effects of the H2O flow ratio and sputtering power on the hydrogen content in the films were studied by Fourier transform infrared spectroscopy (FTIR) and secondary ion mass spectrometry (SIMS). The hydrogen content in the films deposited in $\text{O$_{2}$}+\text{H$_{2}$O}$ mixed gas was approximately three times as large as that deposited in O2 gas, and a maximum hydrogen content of $3.5\times 10^{21}$ atoms/cm3 was obtained.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-02-15
著者
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ITADANI Naruhiro
Department of Materials Science, Kitami Institute of Technology
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Kawamura Midori
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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Itoh Hidenobu
Department Of Materials Science And Engineering Kitami Institute Of Technology
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Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Itadani Naruhiro
Department of Materials Science, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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Kawamura Midori
Department of Materials Science and Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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