Preparation of Low-Resistivity $\mathbf{\alpha}$-Ta Thin Films on (001) Si by Conventional DC Magnetron Sputtering
スポンサーリンク
概要
- 論文の詳細を見る
We have examined the preparation conditions of low-resistivity $\alpha$-Ta thin films on (001) Si by conventional dc magnetron sputtering without bias sputtering or ion beam radiation. As a result, when the sputtering conditions at substrate temperatures above 400°C and sputtering dc powers above 50 W are satisfied, $\alpha$-Ta films can be grown in a single-oriented (110) state on (001) Si by conventional dc sputtering to minimize the surface energy.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-07-15
著者
-
SHIOJIRI Masayuki
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
-
Shinkai Satoko
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
-
Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
-
Yanagisawa Hideto
Department Of Electrical And Electronic Engineering Kitami Institute Of Technology
-
Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
-
Shinkai Satoko
Department of Control Engineering, Takuma National College of Technology, 551 Koda, Takuma-cho, Kagawa 769-1192, Japan
-
Shiojiri Masayuki
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan
関連論文
- Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si
- Difference in Thermal Degradation Behavior of ZrO_2 and HfO_2 Anodized Capacitors
- Epitaxial Ir Thin Film on (001) MgO Single Crystal Prepared by Sputtering
- Preparation of Low-Resistivity α-Ta Thin Films on (001) Si by Conventional DC Magnetron Sputtering
- Highly Texrured (100) RuO_2/(001) Ru Multilayers Preparedly by Sputtering
- Electrical Properties of HfO_2 Thin Insulating Film Prepared by Anodic Oxidation
- C-Axis-Oriented Ru Thin Fillns Prepared by Sputtering in Ar and O_2 Gas Mixture : Surfaces, Interfaces, and Films
- Solid-Phase Reactions of Diffusion Barriers of Ti and TiN to Copper Layers on SiO_2
- Realization of Cu(111) Single-Oriented State on SiO_2 by Annealing Cu-Zr Film and the Thermal Stability of Cu-Zr/ZrN/Zr/Si Contact System
- Single-Oriented Growth of(111)Cu Film on Thin ZrN/Zr Bilayered Film for ULSI Metallization
- Study on Preparation Conditions of Single-Oriented(002)Zr Thin Films on n-(001)Si
- Sequential Single-Oriented Growth of(111)Cu/(111)HfN/(002)Hf Trilayered Film on(001)Si and Its Thermal Stability
- Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process
- Preparation of Oxygern-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization
- Formation Process and Electrical Property of RuO_2 Thin Films Prepared by Reactive Sputtering
- Initial Silicide Formation Process of Single Oriented (002) Hf Film on Si and Its Diffusion Barrier Property
- A Study on the Preparation Conditions of Single Oriented (002) Hf Film on n-(001) Si
- Surface Oxidation Behavior of TiN Film Caused by Depositing SrTiO_3 Film
- Oriented Growth of Cu(110) on YSi_(1100)/Si(100) and Diffusion Behavior in Copper Silicide Formation
- Auger Electron Spectroscopy Study on the Stability of the Interface between Deposited Cu_9Al_4 Intermetallic Compound Film and Si
- Influence of Sputtering Parameters on the Formation Process of High-Quality and Low-Resistivity HfN Thin Film
- Preparation of CU_9Al_4 Intermetallie Compound Films as a Metallization Material for LSI Technology
- Interfacial Solid-Phase Reaction in Al/HfN/Hf/Si Contact System during Postmetallization Annealing
- Auger Electron Spectroscopy Study on the Characterization and Stability of the Cu_9Al_4/TiN/Si System
- Formation Process and Electrical Property of IrO_2 Thin Films Prepared by Reactive Sputtering
- Preparation of Cu_Zr_7 Intermetallic Compound Film and Its Application as a Diffusion Barrier in Cu/Cu_Zr_7/ZrN/Si Contact System
- Epitaxial Growth of HfN Film and Sequential Single-Oriented Growth of Al/HfN Bilayered Film on (001) and (111) Si
- Application of Al_3Hf/Hf Bilayered Film as a Diffusion Barrier to Al Metallization System of Si Large-Scale Integration
- Effect of Heat Treatment on Ion Conductivity of Hydrated ZrO2 Thin Films Prepared by Reactive Sputtering Using H2O Gas
- Preparation of RhO2 Thin Films by Reactive Sputtering and Their Characterizations
- Electrical Properties of Amorphous Rh Oxide Thin Films Prepared by Reactive Sputtering
- Thermal Stability of RuO_2 Thin Films and Effects of Annealing Ambient on Their Reduction Process
- Preparation of PtO and α-PtO_2 Thin Films by Reactive Sputtering and Their Electrical Properties
- Effects of Sputtering Gas Pressure on Electrochromic Properties of Ni Oxyhydroxide Thin Films Prepared by Reactive Sputtering in H2O Atmosphere
- Dielectric Properties of Zr–Al Anodized Thin Film Capacitors Prepared Using Al-Doped Zr Alloy Films
- Effects of Substrate Cooling during Sputter Deposition of Hydrogen-Containing Ta2O5 Thin Films in H2O Atmosphere on their Ion Conductivity
- Transmissin Electron Microscopy Observation of Polymorphic Epitaxial Growth of YSi_ Layer in Al(001)/YSi_/Si(001) Systems
- Thermal Stability of W_2N Film as a Diffusion Barrier between Al and Si
- Nuclear Quadrupole Resonance of Nitrogen in Hydrazine
- Stoichiometry of Ta-N Film and Its Application for Diffusion Barrier in the Al_3Ta/Ta-N/Si Contact System
- Interaction of Al_3Ta Intermetallic Compound Film with Si : Surfaces, Interfaces and Films
- Preparation and Characterizations of Al_3Ta Intermetallic Compound Films : Surfaces, Interfaces and Films
- Oxidation Characteristics of Al–Ta Thin Alloy Films as a Passivation Layer on Cu
- Distribution of Free Volume and Dielectric Relaxation due to Segmental Motion of Amorphous Chains in Chlorinated Poly(ethylene)
- Effect of the Distribution of Free Volume on the β Relaxation in Poly : Vinylidene Fluoride
- Mechanical Relaxation of Poly (Vinylidene Fluoride) and Copolymer of Vinylidene Fluoride and Tetrafluoroethylene in α and β Relaxation Regions
- Effects of Al3Ta/TaN Bilayered Diffusion Barriers in the Al/Si Contact Systems
- Auger Electron Spectroscopy Study on the Stability and the Interfacial Reaction of Ta, Ta-N arnd TaN Films as a Diffusion Barrier between Cu_9Al_4 Film and Si
- Characterizations and Barrier Properties of WN_x Film in the Al_W/WN_x/Si Contact System
- Control of Epitaxial Growth Plane of Rh Thin Films on A-Plane Sapphire by Sputter Deposition
- Effects of Nb Surface and Ti Interface Layers on Thermal Stability and Electrical Resistivity of Ag Thin Films
- Effects of Substrate Temperature on Electrochromic Properties of Cobalt Oxide and Oxyhydroxide Thin Films Prepared by Reactive Sputtering Using O2 and H2O Gases
- Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation
- Electrical Properties of a Thin Anodized Capacitor Made of Y-Doped Al Alloy Film
- Epitaxial Growth of (001)Rh Thin Film on (001)MgO Single-Crystal Substrate by Sputtering
- Realization of Sequential Epitaxial Growth of Cu/HfN Bilayered Films on (111) and (001) Si
- Ni Oxyhydroxide Thin Films Prepared by Reactive Sputtering Using $\text{O$_{2}$} + \text{H$_{2}$O}$ Mixed Gas
- Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in $\text{Ar}+\text{O$_{2}$}$ and $\text{Ar}+\text{N$_{2}$}$ Mixed Gases
- Preparation of Low-Resistivity $\mathbf{\alpha}$-Ta Thin Films on (001) Si by Conventional DC Magnetron Sputtering
- Crystal Orientation Change of Ni Films by Sputtering in Ar-N2 Mixed Gases
- Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering
- Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-$\mu$m Design Rule
- Preparation of Hydrogen-Containing Ta2O5 Thin Films by Reactive Sputtering Using $\text{O$_{2}$}+\text{H$_{2}$O}$ Mixed Gas
- Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
- Crystal Orientation of Epitaxial $\alpha$-Ta(110) Thin Films Grown on Si(100) and Si(111) Substrates by Sputtering
- Epitaxial Growth of (0001)Ru Thin Films on (111)ZrN/(111)Si by Low-Temperature Process and Their Surface Morphologies
- Preparation of Single-Oriented (111)VN Film with Low-Resistivity and Its Application as Diffusion Barrier between Cu and Si
- Loss Properties of Anodized Thin-Film Capacitors Fabricated Using Hf-Doped Nb Alloy Films
- Thermally Stable Ag Thin Films Modified with Very Thin Al Oxide layers
- Oxidation and Morphology Change of Ru Films Caused by Sputter Deposition of Ta2O5 Films
- Dielectric Properties of SrTiO 3 Capacitor Using TiN Bottom Electrode and Effects of SrTiO 3 Film Thickness
- Formation Process and Electrical Property of IrO2 Thin Films Prepared by Reactive Sputtering
- Optimization of Surface Layers for Suppression of Agglomeration in Ag Films
- Effect of Substrate Temperature on Epitaxial Orientation of Rh Thin Films Sputtered on A-Plane Sapphire
- Preparation of Thin-Film Capacitor with High Reliability by Anodization of Zr–Al Alloy Film
- Preparation of Oxygen-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization