Oxidation and Morphology Change of Ru Films Caused by Sputter Deposition of Ta2O5 Films
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概要
- 論文の詳細を見る
Ta2O5 films were sputter deposited on Ru films and Ta2O5/Ru double layers were prepared as a model capacitor. The effects of Ta2O5 deposition temperature on oxidation of the Ru films and surface morphology of the double layers were examined. The surface roughness of the double layers increased with increasing deposition temperature of the Ta2O5 films. 1) Crystallization of Ta2O5 films, 2) crystal grain growth of Ru films, and 3) formation of RuO2 due to the oxidation of Ru were found to be the reasons for surface roughening.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-04-15
著者
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Kawamura Midori
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan
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Kawamura Midori
Department of Materials Science and Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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