Dielectric Properties of SrTiO 3 Capacitor Using TiN Bottom Electrode and Effects of SrTiO 3 Film Thickness
スポンサーリンク
概要
- 論文の詳細を見る
SrTiO3 thin films are prepared on TiN bottom electrodes by rf magnetron sputtering, and the effect of the oxidation of the TiN electrodes on dielectric properties of SrTiO3 capacitors is studied. At the substrate temperature of 400°C, a relative dielectric constant of 120 is obtained for SrTiO3 films with a thickness of 150 nm and the maximum capacitance of 15 nF/mm2 is obtained at the SrTiO3 film thickness of 12 nm. The TiN bottom electrode is found to be oxidized during SrTiO3 film deposition, and the oxidized layer is suggested to be rutile-TiO2, with a relative dielectric constant of 80, through comparisons with Au/SrTiO3/TiN and Au/SrTiO3/Pt capacitors. The thickness of oxidized TiN is found to grow logarithmically with increasing SrTiO3 thickness.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-08-15
著者
-
Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
-
Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
-
Kawamura Midori
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology,
-
Kawamura Midori
Department of Materials Science and Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
関連論文
- Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si
- Difference in Thermal Degradation Behavior of ZrO_2 and HfO_2 Anodized Capacitors
- Epitaxial Ir Thin Film on (001) MgO Single Crystal Prepared by Sputtering
- Highly Texrured (100) RuO_2/(001) Ru Multilayers Preparedly by Sputtering
- Electrical Properties of HfO_2 Thin Insulating Film Prepared by Anodic Oxidation
- C-Axis-Oriented Ru Thin Fillns Prepared by Sputtering in Ar and O_2 Gas Mixture : Surfaces, Interfaces, and Films
- Solid-Phase Reactions of Diffusion Barriers of Ti and TiN to Copper Layers on SiO_2
- Realization of Cu(111) Single-Oriented State on SiO_2 by Annealing Cu-Zr Film and the Thermal Stability of Cu-Zr/ZrN/Zr/Si Contact System
- Single-Oriented Growth of(111)Cu Film on Thin ZrN/Zr Bilayered Film for ULSI Metallization
- Study on Preparation Conditions of Single-Oriented(002)Zr Thin Films on n-(001)Si
- Sequential Single-Oriented Growth of(111)Cu/(111)HfN/(002)Hf Trilayered Film on(001)Si and Its Thermal Stability
- Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process
- Preparation of Oxygern-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization
- Formation Process and Electrical Property of RuO_2 Thin Films Prepared by Reactive Sputtering
- Initial Silicide Formation Process of Single Oriented (002) Hf Film on Si and Its Diffusion Barrier Property
- A Study on the Preparation Conditions of Single Oriented (002) Hf Film on n-(001) Si
- Surface Oxidation Behavior of TiN Film Caused by Depositing SrTiO_3 Film
- Oriented Growth of Cu(110) on YSi_(1100)/Si(100) and Diffusion Behavior in Copper Silicide Formation
- Auger Electron Spectroscopy Study on the Stability of the Interface between Deposited Cu_9Al_4 Intermetallic Compound Film and Si
- Influence of Sputtering Parameters on the Formation Process of High-Quality and Low-Resistivity HfN Thin Film
- Preparation of CU_9Al_4 Intermetallie Compound Films as a Metallization Material for LSI Technology
- Interfacial Solid-Phase Reaction in Al/HfN/Hf/Si Contact System during Postmetallization Annealing
- Auger Electron Spectroscopy Study on the Characterization and Stability of the Cu_9Al_4/TiN/Si System
- Formation Process and Electrical Property of IrO_2 Thin Films Prepared by Reactive Sputtering
- Preparation of Cu_Zr_7 Intermetallic Compound Film and Its Application as a Diffusion Barrier in Cu/Cu_Zr_7/ZrN/Si Contact System
- Epitaxial Growth of HfN Film and Sequential Single-Oriented Growth of Al/HfN Bilayered Film on (001) and (111) Si
- Application of Al_3Hf/Hf Bilayered Film as a Diffusion Barrier to Al Metallization System of Si Large-Scale Integration
- Effect of Heat Treatment on Ion Conductivity of Hydrated ZrO2 Thin Films Prepared by Reactive Sputtering Using H2O Gas
- Preparation of RhO2 Thin Films by Reactive Sputtering and Their Characterizations
- Electrical Properties of Amorphous Rh Oxide Thin Films Prepared by Reactive Sputtering
- Thermal Stability of RuO_2 Thin Films and Effects of Annealing Ambient on Their Reduction Process
- Preparation of PtO and α-PtO_2 Thin Films by Reactive Sputtering and Their Electrical Properties
- Effects of Sputtering Gas Pressure on Electrochromic Properties of Ni Oxyhydroxide Thin Films Prepared by Reactive Sputtering in H2O Atmosphere
- Dielectric Properties of Zr–Al Anodized Thin Film Capacitors Prepared Using Al-Doped Zr Alloy Films
- Effects of Substrate Cooling during Sputter Deposition of Hydrogen-Containing Ta2O5 Thin Films in H2O Atmosphere on their Ion Conductivity
- Transmissin Electron Microscopy Observation of Polymorphic Epitaxial Growth of YSi_ Layer in Al(001)/YSi_/Si(001) Systems
- Thermal Stability of W_2N Film as a Diffusion Barrier between Al and Si
- Nuclear Quadrupole Resonance of Nitrogen in Hydrazine
- Stoichiometry of Ta-N Film and Its Application for Diffusion Barrier in the Al_3Ta/Ta-N/Si Contact System
- Interaction of Al_3Ta Intermetallic Compound Film with Si : Surfaces, Interfaces and Films
- Preparation and Characterizations of Al_3Ta Intermetallic Compound Films : Surfaces, Interfaces and Films
- Oxidation Characteristics of Al–Ta Thin Alloy Films as a Passivation Layer on Cu
- Distribution of Free Volume and Dielectric Relaxation due to Segmental Motion of Amorphous Chains in Chlorinated Poly(ethylene)
- Effect of the Distribution of Free Volume on the β Relaxation in Poly : Vinylidene Fluoride
- Mechanical Relaxation of Poly (Vinylidene Fluoride) and Copolymer of Vinylidene Fluoride and Tetrafluoroethylene in α and β Relaxation Regions
- Effects of Al3Ta/TaN Bilayered Diffusion Barriers in the Al/Si Contact Systems
- Auger Electron Spectroscopy Study on the Stability and the Interfacial Reaction of Ta, Ta-N arnd TaN Films as a Diffusion Barrier between Cu_9Al_4 Film and Si
- Characterizations and Barrier Properties of WN_x Film in the Al_W/WN_x/Si Contact System
- Control of Epitaxial Growth Plane of Rh Thin Films on A-Plane Sapphire by Sputter Deposition
- Effects of Nb Surface and Ti Interface Layers on Thermal Stability and Electrical Resistivity of Ag Thin Films
- Effects of Substrate Temperature on Electrochromic Properties of Cobalt Oxide and Oxyhydroxide Thin Films Prepared by Reactive Sputtering Using O2 and H2O Gases
- Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation
- Electrical Properties of a Thin Anodized Capacitor Made of Y-Doped Al Alloy Film
- Epitaxial Growth of (001)Rh Thin Film on (001)MgO Single-Crystal Substrate by Sputtering
- Realization of Sequential Epitaxial Growth of Cu/HfN Bilayered Films on (111) and (001) Si
- Ni Oxyhydroxide Thin Films Prepared by Reactive Sputtering Using $\text{O$_{2}$} + \text{H$_{2}$O}$ Mixed Gas
- Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in $\text{Ar}+\text{O$_{2}$}$ and $\text{Ar}+\text{N$_{2}$}$ Mixed Gases
- Preparation of Low-Resistivity $\mathbf{\alpha}$-Ta Thin Films on (001) Si by Conventional DC Magnetron Sputtering
- Crystal Orientation Change of Ni Films by Sputtering in Ar-N2 Mixed Gases
- Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering
- Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-$\mu$m Design Rule
- Preparation of Hydrogen-Containing Ta2O5 Thin Films by Reactive Sputtering Using $\text{O$_{2}$}+\text{H$_{2}$O}$ Mixed Gas
- Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
- Crystal Orientation of Epitaxial $\alpha$-Ta(110) Thin Films Grown on Si(100) and Si(111) Substrates by Sputtering
- Epitaxial Growth of (0001)Ru Thin Films on (111)ZrN/(111)Si by Low-Temperature Process and Their Surface Morphologies
- Preparation of Single-Oriented (111)VN Film with Low-Resistivity and Its Application as Diffusion Barrier between Cu and Si
- Loss Properties of Anodized Thin-Film Capacitors Fabricated Using Hf-Doped Nb Alloy Films
- Thermally Stable Ag Thin Films Modified with Very Thin Al Oxide layers
- Oxidation and Morphology Change of Ru Films Caused by Sputter Deposition of Ta2O5 Films
- Dielectric Properties of SrTiO 3 Capacitor Using TiN Bottom Electrode and Effects of SrTiO 3 Film Thickness
- Formation Process and Electrical Property of IrO2 Thin Films Prepared by Reactive Sputtering
- Optimization of Surface Layers for Suppression of Agglomeration in Ag Films
- Effect of Substrate Temperature on Epitaxial Orientation of Rh Thin Films Sputtered on A-Plane Sapphire
- Preparation of Thin-Film Capacitor with High Reliability by Anodization of Zr–Al Alloy Film
- Preparation of Oxygen-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization