Control of Epitaxial Growth Plane of Rh Thin Films on A-Plane Sapphire by Sputter Deposition

概要

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We have expected that the epitaxial growth of (111)Rh and (001)Rh films with a thickness of 100 nm can be controlled on ($11 \bar{2} 0$) sapphire by changing sputtering parameters using an ultrahigh-vacuum sputtering system, because the lattice mismatches between the two-dimensional superlattice cells of (111)Rh/($11 \bar{2} 0$) sapphire and (001)Rh/($11 \bar{2} 0$) sapphire systems are the same. Thus, the effect of rf sputtering power ($P_{\text{rf}}$) on each epitaxial growth was examined, and the crystal quality, surface morphology, resistivity and temperature coefficient of resistivity (TCR) of the prepared Rh films were evaluated. As a result, it is revealed that both the (111)Rh and (001)Rh films can be grown epitaxially on ($11 \bar{2} 0$) sapphire by adjusting only the values of $P_{\text{rf}}$ (deposition rate: $R_{\text{d}}$) under the condition of the substrate temperature ($T_{\text{s}}$) of 500 °C. In addition, it is confirmed that the average surface roughness of these epitaxially grown Rh films is below approximately 1.2 nm, and resistivity of approximately $5.6 \times 10^{-6}$ $\Omega$ cm is obtained.
2006-04-15