Effects of Al3Ta/TaN Bilayered Diffusion Barriers in the Al/Si Contact Systems
スポンサーリンク
概要
- 論文の詳細を見る
A thermally stable contact system of Al/Al3Ta/TaN/Si, which tolerates post-metallization annealing even at 600° C for 1 h, was successfully prepared by achieving a state of chemical pseudo-equilibrium at the interface of Al/Al3Ta and that of Al3Ta/TaN. No solid-phase reactions took place at these interfaces due to the realization of minimum free energy states. The thermal stability of the interfaces in the contact system was discussed from the point of view of the solid-phase reaction of thin films. It was also revealed by X-ray diffraction analysis that the absence of structural change due to grain growth in both the TaN and Al3Ta layers by annealing is effective for the total stability of the contact system. We have been successfully able to demonstrate the validity of realizing the chemical pseudo-equilibrium interfaces for preparing thermally stable contact systems.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-15
著者
-
Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
-
Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
-
Takeyama M
Kitami Inst. Technol. Kitami Jpn
-
Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
関連論文
- Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si
- Difference in Thermal Degradation Behavior of ZrO_2 and HfO_2 Anodized Capacitors
- Epitaxial Ir Thin Film on (001) MgO Single Crystal Prepared by Sputtering
- Highly Texrured (100) RuO_2/(001) Ru Multilayers Preparedly by Sputtering
- Electrical Properties of HfO_2 Thin Insulating Film Prepared by Anodic Oxidation
- C-Axis-Oriented Ru Thin Fillns Prepared by Sputtering in Ar and O_2 Gas Mixture : Surfaces, Interfaces, and Films
- Solid-Phase Reactions of Diffusion Barriers of Ti and TiN to Copper Layers on SiO_2
- Realization of Cu(111) Single-Oriented State on SiO_2 by Annealing Cu-Zr Film and the Thermal Stability of Cu-Zr/ZrN/Zr/Si Contact System
- Single-Oriented Growth of(111)Cu Film on Thin ZrN/Zr Bilayered Film for ULSI Metallization
- Study on Preparation Conditions of Single-Oriented(002)Zr Thin Films on n-(001)Si
- Sequential Single-Oriented Growth of(111)Cu/(111)HfN/(002)Hf Trilayered Film on(001)Si and Its Thermal Stability
- Evaluation of [111]-Textured Cu Layer Formed on Thin Nb Barrier Layer on SiO_2(Session 8A Silicon Devices V,AWAD2006)
- Evaluation of [111]-Textured Cu Layer Formed on Thin Nb Barrier Layer on SiO_2(Session 8A Silicon Devices V)
- Formation of Preferentially Oriented Cu [111] Layer on Nb [110] Barrier on SiO_2
- Structural Analyses of Cu[111] Layer on Nb[110] Barrier Formed on SiO_2(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- Structural Analyses of Cu[111] Layer on Nb[110] Barrier Formed on SiO_2 (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Formation of [111] Preferentially Oriented Cu Layer on [110] Nb Barrier on SiO_2
- Formation of [111] Preferentially Oriented Cu Layer on [110] Nb Barrier on SiO_2
- Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process
- Preparation of Oxygern-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization
- Formation Process and Electrical Property of RuO_2 Thin Films Prepared by Reactive Sputtering
- Initial Silicide Formation Process of Single Oriented (002) Hf Film on Si and Its Diffusion Barrier Property
- A Study on the Preparation Conditions of Single Oriented (002) Hf Film on n-(001) Si
- Surface Oxidation Behavior of TiN Film Caused by Depositing SrTiO_3 Film
- Oriented Growth of Cu(110) on YSi_(1100)/Si(100) and Diffusion Behavior in Copper Silicide Formation
- Auger Electron Spectroscopy Study on the Stability of the Interface between Deposited Cu_9Al_4 Intermetallic Compound Film and Si
- Influence of Sputtering Parameters on the Formation Process of High-Quality and Low-Resistivity HfN Thin Film
- Preparation of CU_9Al_4 Intermetallie Compound Films as a Metallization Material for LSI Technology
- Interfacial Solid-Phase Reaction in Al/HfN/Hf/Si Contact System during Postmetallization Annealing
- Auger Electron Spectroscopy Study on the Characterization and Stability of the Cu_9Al_4/TiN/Si System
- Formation Process and Electrical Property of IrO_2 Thin Films Prepared by Reactive Sputtering
- Preparation of Cu_Zr_7 Intermetallic Compound Film and Its Application as a Diffusion Barrier in Cu/Cu_Zr_7/ZrN/Si Contact System
- Epitaxial Growth of HfN Film and Sequential Single-Oriented Growth of Al/HfN Bilayered Film on (001) and (111) Si
- Application of Al_3Hf/Hf Bilayered Film as a Diffusion Barrier to Al Metallization System of Si Large-Scale Integration
- Effect of Heat Treatment on Ion Conductivity of Hydrated ZrO2 Thin Films Prepared by Reactive Sputtering Using H2O Gas
- Thermal Stability of W_2N Compound Barrier in W/W_2N/poly-Si Gate Electrode Configuration(Electronic Materials)
- Effectiveness of Al_W Layer on Suppression of Spontaneous Reaction in Al/Al_W/W_2N/Si Contact Systems
- Solid-Phase Reactions in Polymorphic Epitaxial Contact Systems of Al/YSi_/Si
- Preparation of WN_x Films and Their Diffusion Barrier Properties in Cu/Si Contact Systems
- Preparation of RhO2 Thin Films by Reactive Sputtering and Their Characterizations
- Electrical Properties of Amorphous Rh Oxide Thin Films Prepared by Reactive Sputtering
- Thermal Stability of RuO_2 Thin Films and Effects of Annealing Ambient on Their Reduction Process
- Preparation of PtO and α-PtO_2 Thin Films by Reactive Sputtering and Their Electrical Properties
- Thermal Stability of W_2N Compound Barrier in W/W_2N/poly-Si Gate Electrode Configuration
- Effects of Sputtering Gas Pressure on Electrochromic Properties of Ni Oxyhydroxide Thin Films Prepared by Reactive Sputtering in H2O Atmosphere
- Dielectric Properties of Zr–Al Anodized Thin Film Capacitors Prepared Using Al-Doped Zr Alloy Films
- Effects of Substrate Cooling during Sputter Deposition of Hydrogen-Containing Ta2O5 Thin Films in H2O Atmosphere on their Ion Conductivity
- Preparation of Mo-N Films and Characterization of Oxide Barriers in NbN/Mo-N Josephson Junctions
- Transmissin Electron Microscopy Observation of Polymorphic Epitaxial Growth of YSi_ Layer in Al(001)/YSi_/Si(001) Systems
- Thermal Stability of W_2N Film as a Diffusion Barrier between Al and Si
- Stoichiometry of Ta-N Film and Its Application for Diffusion Barrier in the Al_3Ta/Ta-N/Si Contact System
- Interaction of Al_3Ta Intermetallic Compound Film with Si : Surfaces, Interfaces and Films
- Preparation and Characterizations of Al_3Ta Intermetallic Compound Films : Surfaces, Interfaces and Films
- Oxidation Behavior of Ta Thin Films as a Passivation Layer Deposited on Cu
- Oxidation Characteristics of Al–Ta Thin Alloy Films as a Passivation Layer on Cu
- Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP
- Effects of Al3Ta/TaN Bilayered Diffusion Barriers in the Al/Si Contact Systems
- Auger Electron Spectroscopy Study on the Stability and the Interfacial Reaction of Ta, Ta-N arnd TaN Films as a Diffusion Barrier between Cu_9Al_4 Film and Si
- Characterizations and Barrier Properties of WN_x Film in the Al_W/WN_x/Si Contact System
- Control of Epitaxial Growth Plane of Rh Thin Films on A-Plane Sapphire by Sputter Deposition
- Barrier Properties of Thin ZrNx Films Prepared by Radical-Assisted Surface Reaction
- Atomic Layer Deposition of Thin VNx Film from Tetrakis(diethylamido)vanadium Precursor
- Oxidation Characteristics of Thin Al--Mo Alloy Films with Various Compositions as Metal Capping Layer on Cu
- Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation
- Electrical Properties of a Thin Anodized Capacitor Made of Y-Doped Al Alloy Film
- Epitaxial Growth of (001)Rh Thin Film on (001)MgO Single-Crystal Substrate by Sputtering
- Realization of Sequential Epitaxial Growth of Cu/HfN Bilayered Films on (111) and (001) Si
- Ni Oxyhydroxide Thin Films Prepared by Reactive Sputtering Using $\text{O$_{2}$} + \text{H$_{2}$O}$ Mixed Gas
- Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in $\text{Ar}+\text{O$_{2}$}$ and $\text{Ar}+\text{N$_{2}$}$ Mixed Gases
- Preparation of Low-Resistivity $\mathbf{\alpha}$-Ta Thin Films on (001) Si by Conventional DC Magnetron Sputtering
- Crystal Orientation Change of Ni Films by Sputtering in Ar-N2 Mixed Gases
- Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering
- Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-$\mu$m Design Rule
- Preparation of Hydrogen-Containing Ta2O5 Thin Films by Reactive Sputtering Using $\text{O$_{2}$}+\text{H$_{2}$O}$ Mixed Gas
- Application of Extremely Thin ZrN Film as Diffusion Barrier between Cu and SiOC
- Reactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2
- Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
- Crystal Orientation of Epitaxial $\alpha$-Ta(110) Thin Films Grown on Si(100) and Si(111) Substrates by Sputtering
- Epitaxial Growth of (0001)Ru Thin Films on (111)ZrN/(111)Si by Low-Temperature Process and Their Surface Morphologies
- Preparation of Single-Oriented (111)VN Film with Low-Resistivity and Its Application as Diffusion Barrier between Cu and Si
- Loss Properties of Anodized Thin-Film Capacitors Fabricated Using Hf-Doped Nb Alloy Films
- Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2
- Evolution of Microstructures in Nanocrystalline VN Barrier Leading to Failure in Cu/VN/SiO2/Si Systems
- Thermally Stable Ag Thin Films Modified with Very Thin Al Oxide layers
- Oxidation and Morphology Change of Ru Films Caused by Sputter Deposition of Ta2O5 Films
- Dielectric Properties of SrTiO 3 Capacitor Using TiN Bottom Electrode and Effects of SrTiO 3 Film Thickness
- Formation Process and Electrical Property of IrO2 Thin Films Prepared by Reactive Sputtering
- Effect of Substrate Temperature on Epitaxial Orientation of Rh Thin Films Sputtered on A-Plane Sapphire
- Preparation of Thin-Film Capacitor with High Reliability by Anodization of Zr–Al Alloy Film
- Preparation of Oxygen-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization
- Characterization of silicon nitride thin films deposited by reactive sputtering and plasma-enhanced CVD at low temperatures
- Characterization of TiHfN ternary alloy films as a barrier between Cu plug and Si
- Preparation of nanocrystalline HfN