Kawamura Midori | Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology

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著作論文

Highly Texrured (100) RuO_2/(001) Ru Multilayers Preparedly by Sputtering
C-Axis-Oriented Ru Thin Fillns Prepared by Sputtering in Ar and O_2 Gas Mixture : Surfaces, Interfaces, and Films
Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process
Surface Oxidation Behavior of TiN Film Caused by Depositing SrTiO_3 Film
Formation Process and Electrical Property of IrO_2 Thin Films Prepared by Reactive Sputtering
Effect of Heat Treatment on Ion Conductivity of Hydrated ZrO2 Thin Films Prepared by Reactive Sputtering Using H2O Gas
Preparation of RhO2 Thin Films by Reactive Sputtering and Their Characterizations
Electrical Properties of Amorphous Rh Oxide Thin Films Prepared by Reactive Sputtering
Thermal Stability of RuO_2 Thin Films and Effects of Annealing Ambient on Their Reduction Process
Preparation of PtO and α-PtO_2 Thin Films by Reactive Sputtering and Their Electrical Properties
Effects of Substrate Cooling during Sputter Deposition of Hydrogen-Containing Ta2O5 Thin Films in H2O Atmosphere on their Ion Conductivity
Effects of Substrate Temperature on Electrochromic Properties of Cobalt Oxide and Oxyhydroxide Thin Films Prepared by Reactive Sputtering Using O2 and H2O Gases
Ni Oxyhydroxide Thin Films Prepared by Reactive Sputtering Using $\text{O$_{2}$} + \text{H$_{2}$O}$ Mixed Gas
Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in $\text{Ar}+\text{O$_{2}$}$ and $\text{Ar}+\text{N$_{2}$}$ Mixed Gases
Crystal Orientation Change of Ni Films by Sputtering in Ar-N2 Mixed Gases
Preparation of Hydrogen-Containing Ta2O5 Thin Films by Reactive Sputtering Using $\text{O$_{2}$}+\text{H$_{2}$O}$ Mixed Gas

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