Fabrication of NbN Josephson Tunnel Junctions and Their Application to DC-SQUIDs
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概要
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We have fabricated all hard metal NbN/NbN tunnel junctions. The low dielectic constant of a plasma oxidized a-Si barrier leads to low-capacitance junctions (3 μF/cm^2) which are suitable for SQUID applications. Then, planar dc-SQUIDs have been fabricated with NbN junctions. Higher modulation voltages, as high as 90 μV, with an applied flux were obtained for the SQUIDs with larger values of the product of the critical current and the shunting resistance. Effects of a damping resistance across the loop inductance have also been examined.
- 社団法人応用物理学会の論文
- 1986-08-20
著者
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Matsuda Mizushi
Research Institute Of Applied Electricity Hokkaido University
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Kuriki Shinya
Research Institute For Electronic Science Hokkaido University
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NAGANO Yasushi
Research Institute of Applied Electricity, Hokkaido University
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Nagano Yasushi
Research Institute Of Applied Electricity Hokkaido University:(present Address) Microcomputer Divisi
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Kuriki Shinya
Research Institule Of Applied Electricity Hokkaido Universitiy
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