Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET
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概要
- 論文の詳細を見る
Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) is reported. Applying sputtering-deposited AlN as a gate dielectric, we attained AlN/AlGaN/GaN MIS-HFETs with significant suppression of forward gate leakage currents. However, large frequency dispersion in the C-V characteristics of the device is observed owing to high-density AlN/AlGaN interface states. In order to elucidate the behavior of the interface states deteriorating the device performance, we investigated temperature dependence of the frequency dispersion in the C-V characteristics. As a result, we obtained the activation energies of electron trapping, namely the interface state energy levels, for a wide range of the gate biases. Through characterizing the activation energy modulated by the gate bias, we directly evaluated the gate-control efficiency of the device.
- 一般社団法人電子情報通信学会の論文
- 2012-07-19
著者
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Suzuki Toshi-kazu
Japan Advanced Institute Of Science And Technology (jaist)
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Suzuki Toshi-kazu
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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SHIH Hong-An
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST)
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KUDO Masahiro
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST)
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Kudo Masahiro
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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