Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs

スポンサーリンク

概要

• 論文の詳細を見る

• We have fabricated InxAl1-xAs/InxGa1-xAs metamorphic high electron mobility transistors (MHEMTs) with $x=0.36$, 0.43, and 0.53 on GaAs, and lattice-matched (LM) HEMTs with $x=0.53$ on InP. Using the HEMTs, we have carried out systematic studies on the electron velocity and the impact ionization in the InGaAs channels with several indium contents. The electron velocity is determined by the gate length dependence of cut-off frequency. Although high-density crystalline defects propagate into the channels of the MHEMTs, the electron velocity is not affected by the defects. Impact ionization phenomena, which dominate on-state breakdown voltage, have been investigated by gate-current analysis in the prebreakdown regime of the HEMTs. We have estimated the characteristic electric field of the impact ionization for InGaAs. It has been found that the gate current due to the impact ionization of the MHEMT with $x=0.53$ is smaller than that of the LMHEMT, which is explained by the enhanced electron-hole recombination by the crystalline defects in the MHEMT.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-15

著者

• Suzuki Toshi-kazu

  Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)

• Ono Hideki

  Advanced Devices R&D Department, Micro Systems Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014, Japan

• Taniguchi Satoshi

  Advanced Devices R&D Department, Micro Systems Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014, Japan

関連論文

• Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
• Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
• Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates
• Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
• Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
• Delay Time Analysis of AlGaN/GaN Heterojunction Field-Effect Transistors with AlN or SiN Surface Passivation
• Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal-Insulator-Semiconductor Structures (Special Issue : Solid State Devices and Materials (1))
• Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))
• Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
• Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET

スポンサーリンク