Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal-Insulator-Semiconductor Structures (Special Issue : Solid State Devices and Materials (1))
スポンサーリンク
概要
著者
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Suzuki Toshi-kazu
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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Akabori Masashi
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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Shih Hong‐an
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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SHIH Hong-An
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST)
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Kudo Masahiro
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
関連論文
- Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
- Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
- Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates
- Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
- Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
- Delay Time Analysis of AlGaN/GaN Heterojunction Field-Effect Transistors with AlN or SiN Surface Passivation
- Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal-Insulator-Semiconductor Structures (Special Issue : Solid State Devices and Materials (1))
- Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))
- Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET (電子デバイス)
- Crystal Orientation of Epitaxial $\alpha$-Ta(110) Thin Films Grown on Si(100) and Si(111) Substrates by Sputtering
- Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
- Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET
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