High-Efficiency Long-Spin-Coherence Electrical Spin Injection in CoFe/InGaAs Two-Dimensional Electron Gas Lateral Spin-Valve Devices
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概要
- 論文の詳細を見る
- 2012-11-25
著者
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Akabori Masashi
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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YAMADA Syoji
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST)
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Hidaka Shiro
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
関連論文
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- Ballistic Spin Transport in Four-Terminal NiFe/In_Ga_As Structure : Semiconductors
- Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
- Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal-Insulator-Semiconductor Structures (Special Issue : Solid State Devices and Materials (1))
- Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))
- High-Efficiency Long-Spin-Coherence Electrical Spin Injection in CoFe/InGaAs Two-Dimensional Electron Gas Lateral Spin-Valve Devices