Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates
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概要
- 論文の詳細を見る
We have carried out epitaxial lift-off (ELO) of In_<0.57>Ga_<0.43>As/In_<0.56>Al_<0.44>As metamorphic high electron mobility heterostructures and their van der Waals bonding (VWB) on AlN ceramic substrates. Using a metamorphic heterostructure with an AlAs sacrificial layer and an InGaAs graded buffer grown on GaAs(001), thin film Hall-bar devices on AlN ceramic substrates were successfully fabricated by ELO and VWB. The Hall-bar devices exhibit very high electron mobilities, such as 11000 cm^2/(V-s) at room temperature (RT) and 84000 cm^2/(V-s) at 12 K. The RT mobility is the highest ever reported for ELO devices. This is the first report on ELO for metamorphic devices.
- The Japan Society of Applied Physicsの論文
- 2008-02-25
著者
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Jeong Yonkil
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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Suzuki Toshi-kazu
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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SHINDO Masanori
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST)
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AKABORI Masashi
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST)
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Akabori Masashi
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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Shindo Masanori
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
関連論文
- Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
- Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
- Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates
- Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
- Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
- Delay Time Analysis of AlGaN/GaN Heterojunction Field-Effect Transistors with AlN or SiN Surface Passivation
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- Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))
- Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
- Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET
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