Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
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概要
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Narrow-gap III-V semiconductors, such as InAs, InGaAs/InAlAs with high indium compositions, InSb, and InGaSb/InAlSb, are promising material systems for high-speed and low-power-consumption electron device applications. In this article, we discuss lattice-mismatched growth of the narrow-gap semiconductors on GaAs substrates, focusing on the behaviors and properties of crystalline defects. In addition, we present our proposal and results of epitaxial lift-off technology for the lattice-mismatched growth of the narrow-gap semiconductors. We consider that this technology will open up new possibilities of heterogeneous integration of the narrow-gap semiconductor devices.
- 社団法人電子情報通信学会の論文
- 2008-07-02
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関連論文
- Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
- Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
- Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates
- Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
- Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
- Delay Time Analysis of AlGaN/GaN Heterojunction Field-Effect Transistors with AlN or SiN Surface Passivation
- Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal-Insulator-Semiconductor Structures (Special Issue : Solid State Devices and Materials (1))
- Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))
- Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
- Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET