Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET (電子デバイス)
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概要
- 論文の詳細を見る
- 2012-07-26
著者
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Suzuki Toshi-kazu
Japan Advanced Institute Of Science And Technology (jaist)
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Shih Hong‐an
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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Kudo Masahiro
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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- Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
- Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal-Insulator-Semiconductor Structures (Special Issue : Solid State Devices and Materials (1))
- Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))
- Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET (電子デバイス)
- Crystal Orientation of Epitaxial $\alpha$-Ta(110) Thin Films Grown on Si(100) and Si(111) Substrates by Sputtering
- Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET