Monolithic Implementation of Elemental Devices for Optoelectronic Integrated Circuit in Lattice-Matched Si/III–V–N Alloy Layers
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概要
- 論文の詳細を見る
Light emitting diodes (LEDs) and Si-based metal oxide semiconductor field effect transistors (MOSFETs) were monolithically merged in a single chip which consisted of a Si layer and an InGaPN/GaPN double heterostructure layer lattice-matched to Si grown on a Si substrate by dislocation-free growth process for the first time. The developed fabrication process was conformed to a conventional planar MOSFET process. All LEDs and MOSFETs operated normally. Light emission from the LED was modulated by switching the MOSFET. The growth and fabrication technologies could be effective for realizing monolithic optoelectronic integrated circuits for massively parallel processing and optical interconnections.
- Japan Society of Applied Physicsの論文
- 2006-09-25
著者
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Furukawa Yuzo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Wakahara Akihiro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yonezu Hiroo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Moon Soo-Young
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Morisaki Yuji
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Furukawa Yuzo
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Ishiji Seigi
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Wakahara Akihiro
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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