Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation
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概要
- 論文の詳細を見る
We investigated the properties of deposition of GaP on dry-SiO2 and SiNx masks using molecular beam epitaxy (MBE) or migration-enhanced epitaxy (MEE) under atomic hydrogen irradiation and attempted the selective epitaxial growth of GaP-on-Si. The critical substrate temperature, below which poly-GaP was deposited on a mask layer, was lower for dry-SiO2 than that for SiNx, and was lowered by MEE rather than MBE. As a result, the selective epitaxial growth of GaP was achieved by MEE using the dry-SiO2 mask. It was found that the formation of large anti-phase domains expanding into the surface was suppressed by forming a P-prelayer at low temperature. It was also confirmed that the density of misfit dislocations at the GaP–Si hetero-interface was remarkably reduced with a decrease in the growth area.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-09-15
著者
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TAKAGI Yasufumi
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Yonezu Hiroo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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TSUJI Takuto
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Ohshima Naoki
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yokozeki Mikihiro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Fujimoto Yasuhiro
Department of Chemistry and Materials Science, Tokyo Institute of Technology
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Yokozeki Mikihiro
Department of Electrical and Electronic Engineering, Toyohashi University of Technology,
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Fujimoto Yasuhiro
Department of Electrical and Electronic Engineering, Toyohashi University of Technology,
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Tsuji Takuto
Department of Electrical and Electronic Engineering, Toyohashi University of Technology,
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Takagi Yasufumi
Department of Electrical and Electronic Engineering, Toyohashi University of Technology,
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