TAKAGI Yasufumi | Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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概要
- 同名の論文著者
- Department of Electrical and Electronic Engineering, Toyohashi University of Technologyの論文著者
関連著者
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TAKAGI Yasufumi
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Yonezu Hiroo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Takano Yasushi
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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米津 宏雄
Department Of Electrical And Electronic Information Engineering Toyohashi University Of Technology
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Takagi Yuji
Information And Communications Research Center
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Takagi Yuji
Information And Communications Research Center Matsushita Electric Industrial Co. Ltd.
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Takagi Y
Tokyo Inst. Technology Yokohama‐shi Jpn
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YONEZU Hiroo
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Takagi Yoshihiro
Institute For Molecular Science:(present Address) Himeji Technical University Faculty Of Science
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Takagi Yoshihiro
Himeji Institute Of Technology Faculty Of Science
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Ohshima Naoki
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Tagaki Yuji
Information & Communications Research Center Matsushita Electric Industrial Co. Ltd.
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Takano Yoshinobu
Advanced Technology Research Laboratories, Nippon Steel Corporation
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OHSHIMA Naoki
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Ohshima N
Nec Corp. Kanagawa Jpn
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Yokozeki Mikihiro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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YOKOZEKI Mikihiro
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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TSUJI Takuto
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Pak K
Toyohashi Univ. Technol. Aichi Jpn
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PAK Kangsa
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Pak Kangsa
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Tsuji T
Pioneer Corp. Saitama Jpn
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Fujimoto Yasuhiro
Department of Chemistry and Materials Science, Tokyo Institute of Technology
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HACHIYA Yoshiaki
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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FUJIMOTO YASUHIRO
Department of Transplantation and Immunology, Faculty of Medicine, Kyoto University
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HAYASHIDA Keiji
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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SAMONJI Katsuya
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Fujimoto Yasushi
Materials And Structures Laboratory Tokyo Institute Of Technology
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Shibao Kazuhiro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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UESUGI Shinobu
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Fujimoto Y
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology:(present)mats
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Fujimoto Yasuhiro
Department Of Transplant Surgery Kyoto University Hospital
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Uesugi Shinobu
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Hayashida Keiji
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Hachiya Yoshiaki
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology:(present Addr
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Samonji Katsuya
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology:(present)mats
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Yokozeki Mikihiro
Department of Electrical and Electronic Engineering, Toyohashi University of Technology,
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Fujimoto Yasuhiro
Department of Electrical and Electronic Engineering, Toyohashi University of Technology,
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Tsuji Takuto
Department of Electrical and Electronic Engineering, Toyohashi University of Technology,
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Takagi Yasufumi
Department of Electrical and Electronic Engineering, Toyohashi University of Technology,
著作論文
- Realization of Two-Dimensional Growth and Suppression of Threading Dislocation Generation in (InP)_1(GaAs)_n Quaternary Strained Short-Period Superlattices Grown on GaAs
- Reduction Mechanism of Threading Dislocation Density in GaAs Epilayer Grown on Si Substrate by High-Temperature Annealing
- Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation
- Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation
- Reduction of Threadimg Dislocation Density and Suppression of Crack Formation in In_xGa_P(x〜0.5) Grown on Si(100) Using Strained Short-Period Superlattices
- Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation