Dislocation-Free InxGa1-xP1-yNy/GaP1-zNz Double-Heterostructure Light Emitting Diode on Si Substrate
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概要
- 論文の詳細を見る
An InxGa1-xP1-yNy/GaP0.982N0.018 double-heterostructure (DH) light-emitting diode (LED) was fabricated on a Si substrate using solid-source molecular beam epitaxy (SS-MBE) with an rf plasma nitrogen source. It was confirmed by high resolution X-ray diffraction (XRD) analysis that the structure of the LED had a small lattice mismatch to the Si substrate. A cross-sectional image obtained by transmission electron microscopy (TEM) revealed that there were no threading dislocations in the epitaxial layers. The electroluminescence (EL) properties were also evaluated. The EL peak wavelength of an InxGa1-xP1-yNy/GaP0.982N0.018 DH LED was 665 nm at room temperature when the indium ($x$) and nitrogen contents ($y$) were 4.0% and 3.8%, respectively. A relatively wide EL spectrum was obtained. These specific features of EL spectra could be attributed to a long band tail formed by nitrogen in the InxGa1-xP1-yNy active layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Furukawa Yuzo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
-
Kim Sung
Department Of Anatomy
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Wakahara Akihiro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Moon Soo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
-
Yonezu Hiroo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Wakahara Akihiro
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Moon Soo
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Morita Yoshiro
Department of Chemistry and Materials Technology, Kyoto Institute of Technology
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Morita Yoshiro
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Kim Sung
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 446-701, Republic of Korea
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Morita Yoshiro
Department of Applied Chemistry, School of Science and Engineering, Waseda University
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