Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_<1-x>N
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概要
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We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions-doped III-nitride semiconductor. Tb ions were implanted into Al_<0.35>Ga_<0.65>N epi-layers grown by OMVPE, and the dose were in the range of 1×10^<12>〜2.8×10^<16>Tb/cm^2. RBS/C reveals that ion-beam-induced damage level steeply increases when the dose exceed 5×10^<14>Tb/cm^2. Tb-related luminescence properties are much susceptible to defect, because CL intensity begins to saturate even at low dose (1×10^<13>Tb/cm^2) at which expected defect density is very low. Transient decay time became faster as increases Tb ions dose above 1×10^<13>Tb/cm^2. The results suggest that non-radiative defects, perhaps Tb-defect complexes, are formed in low dose condition even though the structural defect density is very low.
- 2009-06-17
著者
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PARK Ji-Ho
Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.
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OKADA Hiroshi
Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.
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WAKAHARA Akihiro
Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.
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FURUKAWA Yuzo
Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.
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KIM Yong-Tae
Nano-Sci. Res. Center
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SONG Jonghan
Adv. Analysis Center, KIST
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CHANG Ho-Jung
Dept. of Electronics & Information Eng., Dankook Univ.
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SATO Shin-ichiro
Takasaki Adv. Radiation Res. Institute, JAEA
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OHSHIMA Takeshi
Takasaki Adv. Radiation Res. Institute, JAEA
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Chang Ho-jung
Dept. Of Electronics & Information Eng. Dankook Univ.
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Song Jonghan
Adv. Analysis Center Kist
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Furukawa Yuzo
Department Of Electrical And Electronic Information Engineering Toyohashi University Of Technology
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Furukawa Yuzo
Dept. Of Electronics & Information Eng. Toyohashi Univ. Of Tech.
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OKADA Hiroshi
Intelligent Sensing System Research Center, Toyohashi University of Technology
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WAKAHARA Akihiro
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology
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Ohshima Takeshi
Takasaki Adv. Radiation Res. Institute Jsea
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Wakahara Akihiro
Department Of Electrical And Electronic Information Engineering Toyohashi University Of Technology
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Sato Shin-ichiro
Division Of Biotechnology And Macromolecular Chemistry Graduate School Of Engineering Hokkaido Unive
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Sato Shin-ichiro
Takasaki Adv. Radiation Res. Institute Jsea
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Park Ji-ho
Dept. Of Electronics & Information Eng. Toyohashi Univ. Of Tech.
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Okada Hiroshi
Intelligent Sensing System Research Center Toyohashi University Of Technology
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Park Ji-ho
Graduated School Of East-west Medical Sci. Kyung Hee Univ.
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Wakahara Akihiro
Dept. Of Electronic And Information Engineering Toyohashi Univ. Of Technology
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