Red-Light-Emitting Diodes with Site-Selective Eu-Doped GaN Active Layer
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概要
- 論文の詳細を見る
Mg codoping into Eu-doped GaN (GaN:Eu) changed the dominant optical site and increased the photoluminescence (PL) intensity at room temperature (RT). From the ratio of PL integrated intensity at 25 K to that at 300 K, PL efficiency of the GaN:Eu,Mg layer was evaluated to be as high as 77%. On the basis of this experiment, GaN:Eu-based LEDs grown by NH<inf>3</inf>MBE were fabricated. Clear rectification characteristics with a turn-on voltage of 3.2 V were observed and a pure red emission was observed by the naked eye at RT. For the electroluminescence (EL) spectra, two predominant peaks of higher-efficiency optical sites A and C were selectively enhanced and the EL intensity was improved. This result suggests that GaN:Eu was very effective for realizing red-light-emitting devices using the nitride semiconductor.
- 2013-08-25
著者
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Wakahara Akihiro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Okada Hiroshi
Department Of Anesthesiology Iwate Medical University School Of Medicine
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Takagi Yasufumi
Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan
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Matsumura Ryota
Department of Advanced Materials, University of Tokyo, Kashiwa, Chiba 277-8561
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Sekiguchi Hiroto
Department of Electronics and Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Wakahara Akihiro
Department of Electrical and Electronics Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Otani Tatsuki
Department of Electrical and Electronics Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Sekiguchi Hiroto
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Takagi Yasufumi
Central Research Laboratory, Hamamatsu Photonics K.K., Hamamatsu 434-8601, Japan
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Okada Hiroshi
Department of Electrical and Electronics Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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