Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices
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概要
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In this study, the prototype optoelectronic integrated circuits (OEICs) operating with optical input signals were designed and fabricated. A back-side-illuminated (BSI) photodiode was designed and demonstrated by a newly proposed practical method, utilizing micro-electromechanical systems (MEMS) and postcomplement metal oxide semiconductor (CMOS) processes. Additional fabrication processes for the BSI photodiode were proposed and described in detail in this paper. The operational amplifier for amplification of the optical current by the BSI photodiode as the transimpedance amplifier was designed and fabricated. And the pulse width modulation (PWM) wave generator was implemented for modulating optical signals as the prototype OEIC device. The maximum quantum efficiency of 28.4% was obtained from the fabricated BSI photodiode. Output signals of PWM were successfully controlled by the generated optical current of the BSI photodiode.
- 2013-04-25
著者
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Wakahara Akihiro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Okada Hiroshi
Electronics-inspired Interdisciplinary Research Institute Toyohashi Univ. Of Technology
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Sekiguchi Hiroto
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Shin Sang-Baie
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Okada Hiroshi
Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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