Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_<1-x>N

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概要

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• We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions -doped III-nitride semiconductor. Tb ions were implanted into Al_<0.35>Ga_<0.65>N epi-layers grown by OMVPE, and the dose were in the range of 1×10^<12>〜2.8×10^<16>Tb/cm^2. RBS/C reveals that ion-beam-induced damage level steeply increases when the dose exceed 5×10^<14> Tb/cm^2. Tb-related luminescence properties are much susceptible to defect, because CL intensity begins to saturate even at low dose (1×10^<13>Tb/cm^2) at which expected defect density is very low. Transient decay time became faster as increases Tb ions dose above 1×10^<13> Tb/cm^2. The results suggest that non-radiative defects, perhaps Tb-defect complexes, are formed in low dose condition even though the structural defect density is very low.

• 2009-06-17

著者

• PARK Ji-Ho

  Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.

• OKADA Hiroshi

  Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.

• WAKAHARA Akihiro

  Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.

• FURUKAWA Yuzo

  Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.

• KIM Yong-Tae

  Nano-Sci. Res. Center

• SONG Jonghan

  Adv. Analysis Center, KIST

• CHANG Ho-Jung

  Dept. of Electronics & Information Eng., Dankook Univ.

• SATO Shin-ichiro

  Takasaki Adv. Radiation Res. Institute, JAEA

• OHSHIMA Takeshi

  Takasaki Adv. Radiation Res. Institute, JAEA

• Chang Ho-jung

  Dept. Of Electronics & Information Eng. Dankook Univ.

• Song Jonghan

  Adv. Analysis Center Kist

• Furukawa Yuzo

  Department Of Electrical And Electronic Information Engineering Toyohashi University Of Technology

• Furukawa Yuzo

  Dept. Of Electronics & Information Eng. Toyohashi Univ. Of Tech.

• OKADA Hiroshi

  Intelligent Sensing System Research Center, Toyohashi University of Technology

• WAKAHARA Akihiro

  Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology

• Ohshima Takeshi

  Takasaki Adv. Radiation Res. Institute Jsea

• Wakahara Akihiro

  Department Of Electrical And Electronic Information Engineering Toyohashi University Of Technology

• Sato Shin-ichiro

  Division Of Biotechnology And Macromolecular Chemistry Graduate School Of Engineering Hokkaido Unive

• Sato Shin-ichiro

  Takasaki Adv. Radiation Res. Institute Jsea

• Park Ji-ho

  Dept. Of Electronics & Information Eng. Toyohashi Univ. Of Tech.

• Okada Hiroshi

  Intelligent Sensing System Research Center Toyohashi University Of Technology

• Park Ji-ho

  Graduated School Of East-west Medical Sci. Kyung Hee Univ.

• Wakahara Akihiro

  Dept. Of Electronic And Information Engineering Toyohashi Univ. Of Technology

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