Study of ion-beam-induced damage and luminescence properties in terbium-implanted AlGaN

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Wakahara Akihiro

  Department Of Electrical And Electronic Information Engineering Toyohashi University Of Technology

関連論文

• Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_N
• Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_N
• Operation of Monolithically-Integrated Digital Circuits with Light Emitting Diodes Fabricated in Lattice-Matched Si/III-V-N/Si Heterostructure
• Monolithic Integration of III-V Active Devices into Silicon Platform for Optoelectronic Integrated Circuits
• Effect of growth mode on Eu-incorporation and luminescence of Eu-doped GaN epitaxial film grown by plasma-assisted molecular beam epitaxy
• Infrared Absorption Spectrum of InNP
• Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy
• Dislocation-Free In_xGa_P_N_y/GaP_N_z Double-Heterostructure Light Emitting Diode on Si Substrate
• Study of ion-beam-induced damage and luminescence properties in terbium-implanted AlGaN

スポンサーリンク