Effect of growth mode on Eu-incorporation and luminescence of Eu-doped GaN epitaxial film grown by plasma-assisted molecular beam epitaxy
スポンサーリンク
概要
著者
関連論文
- Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_N
- Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_N
- Operation of Monolithically-Integrated Digital Circuits with Light Emitting Diodes Fabricated in Lattice-Matched Si/III-V-N/Si Heterostructure
- Monolithic Integration of III-V Active Devices into Silicon Platform for Optoelectronic Integrated Circuits
- Effect of growth mode on Eu-incorporation and luminescence of Eu-doped GaN epitaxial film grown by plasma-assisted molecular beam epitaxy
- Infrared Absorption Spectrum of InNP
- Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy
- Dislocation-Free In_xGa_P_N_y/GaP_N_z Double-Heterostructure Light Emitting Diode on Si Substrate
- Study of ion-beam-induced damage and luminescence properties in terbium-implanted AlGaN