WAKAHARA Akihiro | Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.
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概要
関連著者
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WAKAHARA Akihiro
Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.
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Wakahara Akihiro
Dept. Of Electronic And Information Engineering Toyohashi Univ. Of Technology
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PARK Ji-Ho
Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.
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OKADA Hiroshi
Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.
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FURUKAWA Yuzo
Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.
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KIM Yong-Tae
Nano-Sci. Res. Center
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SONG Jonghan
Adv. Analysis Center, KIST
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CHANG Ho-Jung
Dept. of Electronics & Information Eng., Dankook Univ.
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SATO Shin-ichiro
Takasaki Adv. Radiation Res. Institute, JAEA
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OHSHIMA Takeshi
Takasaki Adv. Radiation Res. Institute, JAEA
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Chang Ho-jung
Dept. Of Electronics & Information Eng. Dankook Univ.
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Song Jonghan
Adv. Analysis Center Kist
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Furukawa Yuzo
Department Of Electrical And Electronic Information Engineering Toyohashi University Of Technology
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Furukawa Yuzo
Dept. Of Electronics & Information Eng. Toyohashi Univ. Of Tech.
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OKADA Hiroshi
Intelligent Sensing System Research Center, Toyohashi University of Technology
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WAKAHARA Akihiro
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology
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Ohshima Takeshi
Takasaki Adv. Radiation Res. Institute Jsea
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Wakahara Akihiro
Department Of Electrical And Electronic Information Engineering Toyohashi University Of Technology
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Sato Shin-ichiro
Division Of Biotechnology And Macromolecular Chemistry Graduate School Of Engineering Hokkaido Unive
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Sato Shin-ichiro
Takasaki Adv. Radiation Res. Institute Jsea
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Park Ji-ho
Dept. Of Electronics & Information Eng. Toyohashi Univ. Of Tech.
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Okada Hiroshi
Intelligent Sensing System Research Center Toyohashi University Of Technology
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Park Ji-ho
Graduated School Of East-west Medical Sci. Kyung Hee Univ.
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Yabe Aya
Department Of Molecular Biology Institute Of Gerontology Nippon Medical School
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Seki Yoji
The Authors Are With Central R&d Laboratory Japan Energy Corporation
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Yoshida Akira
Dept. of Radiology and Nuclear Medicne, and Internal Medicine, Kyoto University
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Yamamoto T
Department Of Applied Chemistry Himeji Institute Of Technology
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ODA Osamu
Central Research and Development Laboratory, Japan Energy Corporation
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ISHIO Kouji
Deptarment of Electrical and Electronic Engineering, Toyohashi University of Technology
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SEKI Youji
Central Research Lab., Japan Energy Co.
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YAMAMOTO Takenori
Dept. of Electrical and Electronic Eng., Toyohashi Univ. of Technology
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ISHIO Kouji
Dept. of Electrical and Electronic Eng., Toyohashi Univ. of Technology
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Tanaka Yoshiaki
National Research Institute For Metals Tsukuba Laboratories
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Wakahara Akihiro
The Authors Are With The Department Of Electrical And Electronic Engineering Toyohashi Univ. Of Tech
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Yamamoto Takenori
Deptarment Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yamamoto Tokujirou
Department Of Materials Science And Engineering Kyoto University
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Yoshida Akira
First Department Of Internal Medicine University Of Fukui
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Yoshida A
Department Of Applied Biological Sciences School Of Agricultural Sciences Nagoya University
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Oda O
The Authors Are With Central R & D Laboratory Japan Energy Co. Ltd.
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Oda Osamu
Central R&d Laboratoy Japan Energy Corporation
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Ishio Kouji
Deptarment Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yamamoto Teiji
Department Of Electronics Faculty Of Technology Kanazawa University
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Yoshida A
First Department Of Internal Medicine University Of Fukui
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Yamamoto Takayoshi
The Institute Of Scientific And Industrial Research Osaka University
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Yoshida Akira
Dept. Of Electronics Nagoya University
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Yamashiro Tomoki
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Yoshida Akira
Dept. Electrical And Electronic Systems Graduate School Of Science And Engineering Saitama University
著作論文
- Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_N
- Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_N
- Hydride Vapor Phase Epitaxy of GaN on NdGaO_3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale