Electrical Characteristics of Epitaxial $\gamma$-Al2O3/Si for Quantum Tunneling Device
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概要
- 論文の詳細を見る
The characteristics of epitaxial $\gamma$-Al2O3 film deposited by molecular beam epitaxy (MBE) on a Si substrate have been studied for its application to quantum devices with different thicknesses. The epitaxial growth properties and surface morphology of the film were studied by in situ reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). Epitaxial $\gamma$-Al2O3 films on Si substrates with film thicknesses ranging from 2 to 10 nm exhibited an appropriate surface flatness. We observed that the epitaxial $\gamma$-Al2O3 films exhibit appropriate dielectric properties (6–12 MV/cm) and very low leakage currents. From the electrical characteristics, we observed Fowler–Nordheim (F–N) tunneling phenomena with a large band offset. The same properties in thick epitaxial $\gamma$-Al2O3 films may be suitable for quantum tunneling applications.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-15
著者
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Shahjahan Mohammad
Venture Business Laboratory Toyohashi University Of Technology
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Mosammat Halima
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
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Shahjahan Mohammad
Venture Business Laboratory, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Kim Jang-Seop
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology
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