Temperature Dependence of the Output of a Stacked and Amplified Image Sensor
スポンサーリンク
概要
- 論文の詳細を見る
This study analyzes the ambient temperature dependence of the output of a proposed image sensor. A self-compensation effect of the output current with temperature has been observed. Simulation results give the operation condition under which output of the sensor exhibits a zero temperature coefficient. Experimental results show that increase of the dark current from a hydrogenated amorphous silicon (a-Si:H) photodiode can be reduced by the effect up to about 75℃.
- 社団法人応用物理学会の論文
- 1990-02-20
著者
-
Huang Zhong-shou
Graduate School Of Electronic Science And Technology Shizuoka University
-
Ando Takao
Research Institute Of Electronics Shizuoka University
関連論文
- An a-Si:H Separated Absorption and Multiplication Type Photodiode with a-Si_3N_4 Blocking Layer
- Amorphous Silicon Avalanche Photodiode Films Using a Functionally Graded Superlattice Structure
- Amorphous Silicon Avalanche Photodiode Films Using Functionally Graded Superlattice Structure
- Gated Volcano-Shaped Field Emitters with Sharp Polycrystalline-Silicon Tips
- A PROCEDURE FOR RECORDING ELECTRORETINOGRAM AND VISUAL EVOKED POTENTIAL IN FREELY MOVING CATS
- The Effects of a Newly Developed Nonsteroidal Anti-inflammatory Drug (M-5011) on Arachidonic Acid Metabolism in Rheumatoid Synovail Fibroblasts
- Influence of Bonding Wire on Electron Beam in Camera Tube with NEA Cold Cathode
- Characterization and Fabrication of Crater-Shaped Silicon Field Emitters
- Temperature Dependence of the Output of a Stacked and Amplified Image Sensor
- Emission Distributions from NEA Cold Cathodes
- Characterization of p-Type Silicon Field Emitters
- Inhibitory Effects of Hyaluronan on (14C)Arachidonic Acid Release from Labeled Human Synovial Fibroblasts.