Effective Suppression of Beam Divergence for High-Power Laser-Diode Stack Based on External-Cavity Technique
スポンサーリンク
概要
- 論文の詳細を見る
We demonstrate an off-axis external-cavity configuration designed to effectively suppress the beam divergence of a high-power laser-diode stack. The off-axis external cavity consists of a set of beam-transformation systems and a stripe mirror. Thirty-eight off-axis external-cavity laser diodes are individually formed for the high-power laser-diode stack. At a drive current of 40 A, the divergence angle of the slow axis is reduced from 7.6° without the external cavity to 1.6° with the external cavity. The external-cavity laser-diode stack achieves a cw power output of 45 W, or 72.4% of the cw power output of a free-running laser-diode stack.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-03-15
著者
-
Kan Hirofumi
Central Research Institute Hamamatsu Photonics K. K.
-
Miyajima Hirofumi
Central Research Laboratory Hamamatsu Photonics K. K.
-
Zheng Yujin
Central Research Laboratory Hamamatsu Photonics K.k.
-
Oishi Satoru
Central Research Laboratory Hamamatsu Photonics K. K.
-
Uchiyama Takayuki
Central Research Laboratory Hamamatsu Photonics K. K.
-
Oishi Satoru
Central Research Laboratory, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamamatsu, Shizuoka 434-8601, Japan
-
Kan Hirofumi
Central Research Laboratory, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamamatsu, Shizuoka 434-8601, Japan
-
Zheng Yujin
Central Research Laboratory, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamamatsu, Shizuoka 434-8601, Japan
-
Uchiyama Takayuki
Central Research Laboratory, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamamatsu, Shizuoka 434-8601, Japan
-
Miyajima Hirofumi
Central Research Laboratory, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamamatsu, Shizuoka 434-8601, Japan
関連論文
- Mid-Infrared Photoluminescence from Liquid Phase Epitaxial InAs_Sb_y/InAs Multilayers
- Room Temperature InAs_xP_Sb_y/InAs Photodetectors with High Quantum Efficiency
- Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
- AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields : Semiconductors
- Diode-Pumped Glass Laser (10J x 10Hz) Development
- Quasi-CW 110kW AlGaAs Laser Diode Array Module for Inertial Fusion Energy Laser Driver : Optics and Quantum Electronics
- Design and Performance of a Diode-Pumped Nd:Silica-Phosphate Glass Zig-Zag Slab Laser Amplffier for Inertial Fusion Energy : Optics and Quantum Electronics
- Thermal- and Spectral-Characteristics of High-Power Quasi-Continuous Wave 940-nm InGaAs Diode Laser Arrays
- InNAsSb Single Crystals with Cutoff Wavelength of 11-13.5 μm Grown by Melt Epitaxy
- Light-Emitting Diodes with a Peak Wavelength of 5.38 μm from Liquid-Phase Epitaxial Ga_ In_ Sb/InSb Heterostructures(Semiconductors)
- Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs_Sb_/InAs_P_Sb_ Heterostructures
- InAs_Sb_y Single Crystals with Cutoff Wavelength of 8-12 μm Grown by a New Method
- Room-Temperature Operation of InAsSb/InAsPSb Photodetectors with a Cut-off Wavelength of 4.3 μm
- Influence of Sulphidation Treatment on the Performance of Mid-Infrared InAsPSb/InAs Detectors
- Optical Properties of High-Quality Ga_In_xAs_Sb_y/InAs Grown by Liquid-Phase Epitaxy
- Actual Carrier Mobility Determination of GaInAsSb/InAs Grown by Liquid Phase Epitaxy
- Liquid Phase Epitaxial Growth and Characterization of High Quality GaInAsSb/InAs for Photodiodes
- High-Efficiency 894-nm Laser Emission of Laser-Diode-Bar-Pumped Cesium-Vapor Laser
- Effects of Reflective Coatings on Performance of Divergence-Narrowed External-Cavity Laser-Diode Arrays
- High-Power Operation of 1cm Laser Diode Bars on Funryu Heat Sink Cooled by Fluorocarbons
- Characteristics of Laser Diode Bar and Stack with Jet-Type, Water-Cooled Heatsink
- Single-Wavelength 5.6kW Direct Diode Laser with a High-Efficiency Beam Combination
- Melt Epitaxial Growth of High Quality InAs_Sb_y and In_xGa_Sb single crystals with cutoff wavelength of 7-12 μm
- Polarized Memory Switching in Amorphous Se Film
- Germanium- and Zinc-Doped P-type InAsSb Single Crystals with a Cutoff Wavelength of 12.5 μm
- Etch Pit Observation of Very Thin {001}-GaAs Layer by Molten KOH
- Photoluminescence Study of (Ga, Al) As Layer Grown from Ga Solution Pre-Heated at High Temperature
- Uncooled InAsSb photoconductors with long wavelength
- Frequent Detection of Hepatitis C Virus Subtype 3a (HCV-3a) Isolates in Thailand by PCR Using Subtype-Specific Primers
- Extremely High Quantum Photoyield from Cesiated Polycrystalline Diamond Films
- Electroluminescence and Response Characterization of $\beta$-FeSi2-Based Light-Emitting Diodes
- Time-Resolved 1.5 μm-Band Photoluminescence of Highly Oriented $\beta$-FeSi2 Films Prepared by Magnetron-Sputtering Deposition
- Room-Temperature 1.56 μm Electroluminescence of Highly Oriented β-FeSi_2/Si Single Heterojunction Prepared by Magnetron-Sputtering Deposition
- High-Power, High-Brightness 1cm Laser Diode Bar with V-Shaped Optical Waveguide Structure
- Room Temperature 1.58 μm Photoluminescence and Electric Properties of Highly Oriented β-FeSi_2 Films Prepared by Magnetron-Sputtering Deposition
- Design and Operation of High-Energy and High-Average-Power Diode-Pumped Single Nd:YAG Amplifier with Stimulated-Brillouion-Scattering Phase Conjugate Mirror
- Characteristics of Laser Diode Bar and Stack with Jet-Type, Water-Cooled Heatsink
- Effective Suppression of Beam Divergence for High-Power Laser-Diode Stack Based on External-Cavity Technique
- Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
- High-Brightness Narrow-Bandwidth High-Power Laser-Diode Array Based on an External-Cavity Technique
- Efficient Operation of a Cesium-Vapor Laser Longitudinally Pumped by a Fine-Tunable Bandwidth-Narrowed Laser-Diode Bar
- Near-Infrared Photocathode Using Surface Plasmon Resonance
- InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5 μm Grown by Melt Epitaxy
- High-Brightness Narrow-Bandwidth Operation of a Broad-Area Laser Diode with a Rear External Cavity
- Narrow-Bandwidth High-Brightness External-Cavity Laser Diode Bar
- Numerical Simulation of Conversion Efficiency and Beam Quality Factor in Second Harmonic Generation with Diffraction and Pump Depletion
- Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08 Heterostructures