Room Temperature 1.58 μm Photoluminescence and Electric Properties of Highly Oriented β-FeSi_2 Films Prepared by Magnetron-Sputtering Deposition

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Continuous and highly oriented β-FeSi_2 films were prepared on Si (111) substrates at 700-760℃ by use of a RF magnetron sputtering deposition with a Fe target. An inserted low temperature (450℃) initial layer and post-annealing were effective in improving the crystal quality characterized by the widths of X-rays rocking curve (ω scan) and the photoluminescence intensity. As grown β-FeSi_2 films with a full width at half maximum of 15 arcmin were obtained and 1.58 μm photoluminescence at room temperature was clearly observed from the 800℃ annealed films. The as-grown films were p-type, with a hole concentration and a Hall mobility about 2 × 10^<18> cm^<-3> and 20 cm_2/V・s respectively. A conduction type change took place after thermal annealing in N_2 at 890℃for 20 hours, resulting in a electron concentration of 5 × 10^<16> cm^<-3> and a mobility up to 230 cm^2/V・s, while a p-type conduction with a diminished hole concentration and a increased mobility, still remained after thermal annealing at 800℃.
2002-03-15