Double Heterostructure Pb_<1-x>Sr_xS/Pb_<1-y>Sr_yS Lasers Prepared Using Hot Wall Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-04-15

著者

• Ishida Akihiro

  Graduate School Of Electronic Science & Technology Shizuoka University

• Fujiyasu Hiroshi

  Graduate School Of Electronic Science And Technology Shizuoka University

• Fujiyasu Hiroshi

  Department Of Electronics Faculty Of Engineering Shizuoka University

• MOHAMMADNEJAD Shahram

  Graduate School of Electronic Science and Technology, Shizuoka University

• AIKAWA Kazunori

  Faculty of Engineering, Shizuoka University

• Mohammadnejad Shahram

  Graduate School Of Electronic Science And Technology Shizuoka University

• Aikawa Kazunori

  Faculty Of Engineering Shizuoka University

関連論文

• Preparation of aluminum oxide films at low temperatures by a hot wall technique
• Red Electroluminescent Devices Using Mn-Doped CdS(Se)- and CdTe-ZnS Superlattices
• An Indication of Quantum Hall Effect in PbTe-Pb_Sn_xTe Superlattice
• PbMgSrTe and PbSrTeSe Films Prepared by Hot-Wall Epitaxy
• Lead-Strontium-Telluride Films and Lasers Prepared by Hot-Wall Epitaxy
• Double Heterostructure Pb_Sr_xS/Pb_Sr_yS Lasers Prepared Using Hot Wall Epitaxy
• Dependence of Pb1-XSrXS/PbS DH Laser Properties on Active Layer Thickness and Cladding Layer Band Gap
• Growth of Pb_Cd_xSr_yS Films and SLs by Hot Wall Epitaxy for 3 μm Lasers, and Their Electrical Properties
• Resonant-tunneling electron emitter in an AlN∕GaN system
• AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields : Semiconductors
• PbSnCaTe Films and PbSnCaTe/PbSnTe Superlattices Prepared by Molecular Beam Epitaxy(Semiconductors)
• Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect : Semiconductors
• Growth and Characterization of Hot-Wall Epitaxial InGaN Films Using Mixed (Ga+In) Source
• PbCaTe Films and PbCaTe/PbTe Superlattices Prepared by Hot-Wall Epitaxy
• High-Quality InGaN Films Grown by Hot-Wall Epitaxy with Mixed (Ga+In) Source
• High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source (Ga+In) Method
• High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source(Ga+In)Method
• Growth and Characterization of Hot Wall Epitaxial GaN/InGaN Films UsingMetallic/Metalorganic Sources
• Characteristics of Chlorine-Doped ZnSe Films and ZnSe-ZnS Superlattices Grown by Hot Wall Epitaxy
• Characteristics of Nitrogen-Doped ZnTe Films and ZnTe-ZnSe Superlattices Grown by Hot Wall Epitaxy
• Picosecond spectroscopy of ZnTe-ZnSe strained-layer superlattices grown on GaAs(001) by hot wall epitaxy
• A New Technique Keeping off the Mn Evaporant from Oxygen Atmosphere during Reactive Evaporation Process : Surfaces, Interfaces, and Films
• Priority of the Mn Deposition Rate in Reactive Evaporation Conditions
• Burstein-Moss Effect of PbTe-Pb_Sn_xTe Superlattice
• Stimulated Emission Processes in Zn_Cd_xSe/ZnSe Multiquantum Wells

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