Growth and Characterization of Hot Wall Epitaxial GaN/InGaN Films UsingMetallic/Metalorganic Sources

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概要

• 論文の詳細を見る
• 静岡大学の論文

著者

• ISHINO Kenei

  Faculty of Engineering, Shizuoka University

• Fujiyasu Hiroshi

  Department Of Electronics Faculty Of Engineering Shizuoka University

• Ishino Kenei

  Faculty Of Engineering Shizuoka University

• Chu Shucheng

  静岡大学電子科学研究科

• Ishida Akihiro

  静岡大学工学部電気・電子工学科

• Ishino Kenei

  静岡大学工学部電気・電子工学科

• Fujiyasu Hiroshi

  静岡大学工学部電気・電子工学科

• Chu Shucheng

  Faculty Of Engineering Shizuoka University

• Ishida A

  Faculty Of Engineering Shizuoka University

• Ishino K

  Shizuoka Univ. Hamamatsu Jpn

関連論文

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• Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect : Semiconductors
• Growth and Characterization of Hot-Wall Epitaxial InGaN Films Using Mixed (Ga+In) Source
• PbCaTe Films and PbCaTe/PbTe Superlattices Prepared by Hot-Wall Epitaxy
• High-Quality InGaN Films Grown by Hot-Wall Epitaxy with Mixed (Ga+In) Source
• High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source (Ga+In) Method
• High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source(Ga+In)Method
• Growth and Characterization of Hot Wall Epitaxial GaN/InGaN Films UsingMetallic/Metalorganic Sources
• Characteristics of Chlorine-Doped ZnSe Films and ZnSe-ZnS Superlattices Grown by Hot Wall Epitaxy
• Characteristics of Nitrogen-Doped ZnTe Films and ZnTe-ZnSe Superlattices Grown by Hot Wall Epitaxy
• Picosecond spectroscopy of ZnTe-ZnSe strained-layer superlattices grown on GaAs(001) by hot wall epitaxy
• A New Technique Keeping off the Mn Evaporant from Oxygen Atmosphere during Reactive Evaporation Process : Surfaces, Interfaces, and Films
• Priority of the Mn Deposition Rate in Reactive Evaporation Conditions
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