Study of GaN-based Laser Diodes in Near Ultraviolet Region(Semiconductors)

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関連論文

510-515nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
High-Power Pure Blue InGaN Laser Diodes
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Si-Doped InGaN Films Grown on GaN Films
P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
Hole Compensation Mechanism of P-Type GaN Films
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
High-Power GaN P-N Junction Blue-Light-Emitting Diodes
Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
Watt-Class High-Output-Power 365nm Ultraviolet Light-Emitting Diodes
Study of GaN-based Laser Diodes in Near Ultraviolet Region(Semiconductors)
Wavelength Dependence of InGaN Laser Diode Characteristics
Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RF-Discharge Silane Plasma for the Chemical Vapor Deposition of a-Si:H Films
Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip : Semiconductors
Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics
CW Operation of the First-Order AlInGaN 405nm Distributed Feedback Laser Diodes
365nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
Ultraviolet GaN Single Quantum Well Laser Diodes
High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
Velocity of Sound in and Elastic Properties of Cs_2O-B_2O_3 Glasses
Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm
Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage
365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
Wavelength Dependence of InGaN Laser Diode Characteristics
Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes
Optical Gain Spectra of a (0001) InGaN Green Laser Diode
Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure
Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure
Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates (電子部品・材料)

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