Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-04-25
著者
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MUKAI Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Mukai Takashi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Narukawa Yukio
Nitride Semiconductor Research Laboratory Nichia Corporation
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FUJIOKA Akira
Nitride Semiconductor Research Laboratory, Nichia Corporation
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MISAKI Takao
Nitride Semiconductor Research Laboratory, Nichia Corporation
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MURAYAMA Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Fujioka Akira
Nitride Semiconductor Research Laboratory Nichia Corporation
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Misaki Takao
Nitride Semiconductor Research Laboratory Nichia Corporation
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Murayama Takashi
Nitride Semiconductor Research Laboratory Nichia Corporation
関連論文
- Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
- Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
- 510-515nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
- Watt-Class High-Output-Power 365nm Ultraviolet Light-Emitting Diodes
- Wavelength Dependence of InGaN Laser Diode Characteristics
- Ultra-High Efficiency White Light Emitting Diodes
- Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
- A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors