Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-04-25
著者
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MUKAI Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Mukai Takashi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Narukawa Yukio
Nitride Semiconductor Research Laboratory Nichia Corporation
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FUJIOKA Akira
Nitride Semiconductor Research Laboratory, Nichia Corporation
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MISAKI Takao
Nitride Semiconductor Research Laboratory, Nichia Corporation
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MURAYAMA Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Fujioka Akira
Nitride Semiconductor Research Laboratory Nichia Corporation
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Misaki Takao
Nitride Semiconductor Research Laboratory Nichia Corporation
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Murayama Takashi
Nitride Semiconductor Research Laboratory Nichia Corporation
関連論文
- Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
- Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
- 510-515nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
- Watt-Class High-Output-Power 365nm Ultraviolet Light-Emitting Diodes
- Wavelength Dependence of InGaN Laser Diode Characteristics
- Ultra-High Efficiency White Light Emitting Diodes
- Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
- A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
- Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip : Semiconductors
- Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics
- 365nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
- High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
- Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
- Ultraviolet GaN Single Quantum Well Laser Diodes
- Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm
- Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
- Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates
- Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate
- Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection
- Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
- Ultra-High Efficiency White Light Emitting Diodes
- Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage
- Dislocation Reduction Mechanism in Low-Nucleation-Density GaN Growth Using AlN Templates
- Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
- 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
- Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
- Wavelength Dependence of InGaN Laser Diode Characteristics
- Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes