Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection
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概要
- 論文の詳細を見る
We report the demonstration of CW lasing at room temperature in a GaN-based vertical-cavity surface-emitting laser (VCSEL) by current injection. The active region of the VCSEL consisted of a two-pair InGaN/GaN quantum well active layer. The optical cavity consisted of a 7-$\lambda$-thick GaN semiconductor layer and an indium tin oxide layer for p-contact embedded between two SiO2/Nb2O5 dielectric distributed Bragg reflectors. The VCSEL was mounted on a Si substrate by wafer bonding and the sapphire substrate was removed by laser lift-off. Under CW operation for an 8-μm aperture device, the threshold current was 7.0 mA and the emission wavelength was approximately 414 nm.
- Japan Society of Applied Physicsの論文
- 2008-12-25
著者
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MUKAI Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Mukai Takashi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Omae Kunimichi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Higuchi Yu
Nitride Semiconductor Research Laboratory Nichia Corporation
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Matsumura Hiroaki
Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Anan, Tokushima 774-8601, Ja
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Matsumura Hiroaki
Nitride Semiconductor Research Laboratory Nichia Corporation
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