KUMA Shoji | Advanced Research Center, Hitachi Cable, Ltd.
スポンサーリンク
概要
関連著者
-
KUMA Shoji
Advanced Research Center, Hitachi Cable, Ltd.
-
Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
-
OTOKI Yoohei
Advanced Research Center, Hitachi Cable, Ltd.
-
Kuma S
Advanced Research Center Hitachi Cable Ltd.
-
Kuma Shoji
Advanced Research Center Hitachi Cable Ltd.
-
Otoki Yoohei
Advanced Research Center Hitachi Cable Ltd.
-
WATANABE Masatoshi
Advanced Research Center, Hitachi Cable, Ltd.
-
Okubo Seiichi
Takasago Branch Hitaka Works Hitachi Cable Ltd.
-
TAKAHASHI Susumu
Advanced Research Center, Hitachi Cable, Ltd.
-
OKUBO Seiichi
Hitaka Works, Hitachi Cable, Ltd.
-
Takahashi Susumu
Advance Product Research Laboratory Technical Research Institute Toppan Printing Co. Ltd.
-
ONISHI Masaya
Hitaka Works, Hitachi Cattle, Ltd.
-
KASHIWA Mikio
Hitaka Works, Hitachi Cattle, Ltd.
-
OKUBO Seiichi
Takasago Branch, Hitaka Works, Hitachi Cable, Ltd.
-
WATANABE Masatoshi
Metal Research Laboratory, Hitachi Cable, Lid.
-
SHINZAWA Shoji
Metal Research Laboratory, Hitachi Cable, Lid.
-
OTOKI Yoohei
Metal Research Laboratory, Hitachi Cable, Lid.
-
KUMA Shoji
Metal Research Laboratory, Hitachi Cable, Lid.
-
Sasaki Yoshitaka
The Furukawa Electric Co. Ltd.
-
Kashiwa Mikio
Hitaka Works Hitachi Cattle Ltd.
-
Onishi Masaya
Hitaka Works Hitachi Cattle Ltd.
-
Shinzawa Shoji
Metal Research Laboratory Hitachi Cable Lid.
-
Sasaki Y
The Furukawa Electric Co. Ltd.
-
SAKAGUCHI Harunori
Advanced Research Center, Hitachi Cable. Ltd.
-
SASAKI Yukio
Advanced Research Center, Hitachi Cable, Ltd.
-
Sakaguchi H
Hitachi Cable Ltd. Ibaraki Jpn
-
Sakaguchi Harunori
Advanced Research Center Hitachi Cable Ltd.
著作論文
- Properties of Metal-Semiconductor Field-Effect Transistors Fabricated on Carbon-Doped Semi-Insulating GaAs Crystal Grown by Liquid Encapsulated Czochralski Method
- Electrical Insulation Properties of Carbon-Corntrolled Semi-Insulating GaAs
- Influence of Boron in Semi-insulating GaAs Crystals on Their Electrical Activation by Si-Ion Implantation
- Degradation of Activation on Si-Implanted GaAs Crystal Wafers by Mechanical Surface Damages
- Measurement of Abrupt Change of Carrier Concentration by C-V Method