ITAYA Yoshio | Department of Physical Electronics, Tokyo Institute of Technology

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概要

• 同名の論文著者
• Department of Physical Electronics, Tokyo Institute of Technologyの論文著者

関連著者

• Arai Shigehisa

  Department Of Physical Electronics Tokyo Institute Of Technology

• Arai Shigehisa

  Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology

• SUEMATSU Yasuharu

  Department of Physical Electronics, Tokyo Institute of Technology

• ITAYA Yoshio

  Department of Physical Electronics, Tokyo Institute of Technology

• Suematsu Yasuharu

  Department Of Physical Electronics Tokyo Institute Of Technology

• Suematsu Yasuharu

  Department Of Electronic Engineering Kohgakuin University

• Itaya Yoshio

  Department Of Physical Electronics Tokyo Institute Of Technology

• ARAI Shigehisa

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• KISHINO Katsumi

  Department of Engineering and Applied Sciences, Sophia University

• Kishino Katsumi

  Department Of Physical Electronics Tokyo Institute Of Technology

• Kishino Katsumi

  Department Of Electrical And Electronic Engineering Sophia University

• KISHINO Katsumi

  Department of Physical Electronics, Tokyo Institute of Technology

• Katayama Shinya

  Department Of Physical Electronics Tokyo Institute Of Technology:(present Address)nippon Sheet Glass

• Asada Masahiro

  Department of Neurosurgery, Chibune Hospital

• KAWANISHI HIDEO

  Department of Internal Medicine, Miki City Hospital

• Asada Masahiro

  Department Of Physical Electronics Tokyo Institute Of Technology

• Asada Masahiro

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• KATAYAMA Shinya

  Department of Physical Electronics, Tokyo Institute of Technology

• Kawanishi Hideo

  Department Of Physical Electronics Tokyo Institute Of Technology

• Tanbun-Ek Tawee

  Department of Physical Electronics, Tokyo Institute of Technology

• Kawanishi Hideo

  Department Of Cardiology Himeji Cardiovascular Center

• Tanbun-ek Tawee

  Department Of Physical Electronics Tokyo Institute Of Technology

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著作論文

• 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
• Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
• Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
• 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
• Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
• Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
• 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers

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