Kishino Katsumi | Department Of Physical Electronics Tokyo Institute Of Technology
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概要
関連著者
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KISHINO Katsumi
Department of Engineering and Applied Sciences, Sophia University
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Kishino Katsumi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kishino Katsumi
Department Of Electrical And Electronic Engineering Sophia University
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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Suematsu Yasuharu
Department Of Physical Electronics Tokyo Institute Of Technology
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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ITAYA Yoshio
Department of Physical Electronics, Tokyo Institute of Technology
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Itaya Yoshio
Department Of Physical Electronics Tokyo Institute Of Technology
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KISHINO Katsumi
Department of Physical Electronics, Tokyo Institute of Technology
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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UTAKA Katsuyuki
Department of physical Electronics, Tokyo Institute of Technology
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Utaka Katsuyuki
Department Of Physical Electronics Tokyo Institute Of Technology
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Katayama Shinya
Department Of Physical Electronics Tokyo Institute Of Technology:(present Address)nippon Sheet Glass
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KAWANISHI HIDEO
Department of Internal Medicine, Miki City Hospital
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KATAYAMA Shinya
Department of Physical Electronics, Tokyo Institute of Technology
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Kawanishi Hideo
Department Of Electonic Engineering Kogakuin University
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Kawanishi Hideo
Department Of Physical Electronics Tokyo Institute Of Technology:(present Address)honeywell
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Tanbun-Ek Tawee
Department of Physical Electronics, Tokyo Institute of Technology
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Kawanishi Hideo
Department Of Cardiology Himeji Cardiovascular Center
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Tanbun-ek Tawee
Department Of Physical Electronics Tokyo Institute Of Technology
著作論文
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Twin-Guide Laser with Narrow Radiation Angle
- Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure
- 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers