Okuno Yae | Central Research Laboratory Hitachi Ltd.

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概要

• 同名の論文著者
• Central Research Laboratory Hitachi Ltd.の論文著者

関連著者

• Okuno Yae

  Central Research Laboratory Hitachi Ltd.

• TSUCHIYA Tomonobu

  Central Research Laboratory, Hitachi, Ltd.

• Tsuchiya Tomonobu

  Central Research Laboratory Hitachi Ltd

• Okuno Y

  Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology

• OKUNO Yae

  Central Research Laboratory, Hitachi Ltd.,

• Okuno Y

  Central Research Laboratory Hitachi Ltd.

• AOKI Masahiro

  Central Research Laboratory, Hitachi, Ltd.

• Uomi Kazuhisa

  Central Research Laboratory, Hitachi Ltd.

• Kitano T

  Tokyo Electron Kyushu Ltd. Kumamoto Jpn

• Tsuchiya T

  Department Of Electronics Doshisha University

• Kawano T

  Osaka Univ. Osaka Jpn

• UOMI Kazuhisa

  The author is with Optical Device Department, Telecommunications System Group, Hitachi Ltd.

• Kawano T

  Tokyo Electron Kyushu Ltd. Kumamoto Jpn

• Kitano T

  Fundamental Research Laboratories Nec Corporation

• Tsuchiya Tomonobu

  Nagoya University

• TANIWATARI Tsuyoshi

  Central Research Laboratory, Hitachi Ltd.

• KAWANO Toshihiro

  Central Research Laboratory, Hitachi Ltd.

• Uomi K

  The Author Is With Optical Device Department Telecommunications System Group Hitachi Ltd.

• Uomi Kazuhisa

  Central Research Laboratory Hitachi Ltd.

• Kawano Toshihiro

  Central Research Laboratory Hitachi Ltd.

• Taniwatari T

  Hitachi Ltd. Tokyo

• Taniwatari Tsuyoshi

  Central Research Laboratory Hitachi Ltd.

• Tamura Masao

  Optoelectronic Research Laboratory:(present Address) Angstrom Technology Partnership

• Aoki Masahiro

  Central Research Laboratory Hitachi Ltd.

• TSUCHIYA Tomonobu

  Central Research Laboratory, Hitachi Ltd.,

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著作論文

• Threading Dislocation Reduction in InP on GaAs by Thin Strained Interlayer and its Application to the Fabrication of 1.3-μm-Wavelength Laser on GaAs
• Direct Wafer Bonding Technique Aiming for Free-Material and Free-Orientation Integration of Semiconductor Materials
• Direct Wafer Bonding of a (001) InP-Based Strained Multiple Quantum Well on a (110) Si Substrate with a GaAs Buffer Layer, Aligning Cleavage Planes of InP and Si

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