Impurity Effects on Strain-Confined Electron-Hole Liquid in Germanium I. : Photoluminescence Studies on Rrcombination Dynamics

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This paper deals with imjcurity effects on recombination dynamics within strainconfined electron-hole liquid (SCEHL) in Ge, based on timcr-resolved measurementsof photolurninescence intensity. Double acceptors, Be and Zn, are taken as well assingle acceptor In. The double acceptors strongly accelerate rton-radiative recombinaLion with SCEHL. At 1.8 K, recombination ratcc per impurity is T.2 X 10 " cm' sfor Be,and 2.6 x 10 "cm's ' for Zn.These are more than ten times as large as thatfor In, 2.2X10 "cm's '. Especially, recombination through Be impurity is due tomultiphonon-emission process. The Molt crite?-ion is introduced as a qualitativemeasure for the difference between the double and the singlcr acceptors. Free-excitoncapture cross section by Be or In impurity is also derived.
社団法人日本物理学会の論文
1987-12-15