Tamura Naoyoshi | Fujitsu Lab. Ltd.
スポンサーリンク
概要
関連著者
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Tamura Naoyoshi
Fujitsu Lab. Ltd.
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Nakamura Tomoji
Fujitsu Lab. Ltd.
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Tamura Naoyoshi
Fujitsu Lab. Ltd. Tokyo Jpn
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Hara Akito
Electrical Engineering Faculty Of Engineering Tohoku Gakuin University
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HARA Akito
Fujitsu Laboratories Limited
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Tamura Naoyoshi
Fujitsu Laboratories Ltd.
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AOYAMA Takayuki
Fujitsu Laboratories Lid.
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MORI Hiroko
FUJITSU LSI Quality Assurance Div.
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EHARA Hideo
FUJITSU LSI Quality Assurance Div.
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KANETA Chioko
FUJITSU Laboratories Ltd.
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MATSUYAMA Hideya
FUJITSU LSI Quality Assurance Div.
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SHONO Ken
FUJITSU LSI Quality Assurance Div.
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Miyashita Toshihiko
Fujitsu Laboratories Ltd.
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Satoh Shigeo
Fujitsu Laboratories Ltd.
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Kaneta Chioko
Fujitsu Laboratories Limited
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NAKAMURA Tomoji
Fujitsu Laboratories Ltd., Akiruno Technology Center
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Hara Akito
Fujitsu Lab. Ltd.
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Hara Akito
Electrical Engineering, Faculty of Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan
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Hara Akito
Electronic Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan
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Aoyama Takayuki
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 193-0197, Japan
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Satoh Shigeo
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 193-0197, Japan
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Hatada Akiyoshi
Fujitsu Microelectonics, Ltd., 1500 Mizono, Tado, Kuwana, Mie 511-0192, Japan
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Nakamura Tomoji
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Nakamura Tomoji
Fujitsu Laboratories Limited, Akiruno, Tokyo 197-0833, Japan
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Owada Tamotsu
Fujitsu Ltd., 50 Fuchigami, Akiruno, Tokyo 193-0197, Japan
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Shimamune Yousuke
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 193-0197, Japan
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Hatada Akiyoshi
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 193-0197, Japan
著作論文
- Investigation of Degradation model for Ultra-thin Gate Dielectrics
- Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si Heterostructure
- Observation of Dislocation Motion in Si1-xGex Thin Film on Si Substrate by Laser Scattering Method
- Potential of and Issues with Multiple-Stressor Technology in High-Performance 45 nm Generation Devices
- Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructure