Kuramata Akito | Tamura Co. Ltd.
スポンサーリンク
概要
関連著者
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Masui Takekazu
Koha Co. Ltd.
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Sasaki Kohei
Tamura Co. Ltd.
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Kuramata Akito
Tamura Co. Ltd.
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Yamakoshi Shigenobu
Tamura Co. Ltd.
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Ohtomo Akira
Department Of Applied Chemistry Tokyo Institute Of Technology
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Oshima Takayoshi
Department Of Electronic Science And Engineering Kyoto University
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Kaminaga Kenichi
Department of Applied Chemistry, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Mukai Akira
Department of Applied Chemistry, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Fujita Shizuo
Photonics And Electronics Science And Engineering Center Kyoto University
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Kuramata Akito
Tamura Corporation, Sayama, Saitama 350-1328, Japan
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Yamakoshi Shigenobu
Tamura Corporation, Sayama, Saitama 350-1328, Japan
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Mukai Akira
Department Of Cognitive Science (b-32) University Of Liege
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HIGASHIWAKI Masataka
National Institute of Information and Communications Technology
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Shimamura Kiyoshi
National Institute For Materials Science
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SASAKI Kohei
Tamura Co., Ltd.
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KURAMATA Akito
Tamura Co., Ltd.
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VILLORA Encarnacion
National Institute for Materials Science
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Ohtomo Akira
Department of Applied Chemistry, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Mashiko Hisanori
Department of Applied Chemistry, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Fujita Shizuo
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8520, Japan
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Higashiwaki Masataka
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
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Masui Takekazu
KOHA Co., Ltd., Nerima, Tokyo 176-0022, Japan
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Oshima Takayoshi
Department of Applied Chemistry, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
著作論文
- Device-Quality β-GaO Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Device-Quality β-Ga_2O_3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Formation of Semi-Insulating Layers on Semiconducting \beta-Ga
- Si-Ion Implantation Doping in \beta-Ga
- \beta-Ga
- Formation of Semi-Insulating Layers on Semiconducting β-Ga₂O₃ Single Crystals by Thermal Oxidation