Device-Quality β-Ga_2O_3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 2012-03-25

著者

• Yamakoshi Shigenobu

  Tamura Co. Ltd.

• Shimamura Kiyoshi

  National Institute For Materials Science

• Masui Takekazu

  Koha Co. Ltd.

• SASAKI Kohei

  Tamura Co., Ltd.

• KURAMATA Akito

  Tamura Co., Ltd.

• VILLORA Encarnacion

  National Institute for Materials Science

• Sasaki Kohei

  Tamura Co. Ltd.

• Kuramata Akito

  Tamura Co. Ltd.

関連論文

• Device-Quality β-GaO Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
• Device-Quality β-Ga_2O_3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
• Formation of Semi-Insulating Layers on Semiconducting \beta-Ga
• Si-Ion Implantation Doping in \beta-Ga
• \beta-Ga
• Formation of Semi-Insulating Layers on Semiconducting β-Ga₂O₃ Single Crystals by Thermal Oxidation

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