Time-Modulated Electron Cyclotron Resonance Plasma Discharge for Controlling the Polymerization in SiO_2 Etching

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概要

• 論文の詳細を見る

• This study examines 10-100 μs modulated electron cyclotron resonance (ECR) plasma discharge for controlling the generation of reactive species in plasmas. The electron temperature, density and reactive species are measured by means of a Langmuir probe and an actinometric optical emission spectroscopy in the pulsed plasma. Good correlation is found between the density ratio of CF_2 radicals and F atoms in the CHF_3 plasma, and the combination of the pulse duration and intervals. These characteristics are explained in terms of the dependence of the generation of reactive species in the ECR plasma on time (10-100 μs). This method provides for control of the polymerization and achievement of highly selective etching to Si during SiO_2 etching.

• 社団法人応用物理学会の論文
• 1993-12-30

著者

• SAMUKAWA Seiji

  Institute of Fluid Science, Tohoku University

• Samukawa S

  Tohoku Univ. Sendai Jpn

• Samukawa Seiji

  Process Development Department Vlsi Development Division Nec Corporation

• Samukawa Seiji

  Vlsi Development Div. Nec Corporation

• SAMUKAWA Seiji

  LSI Basic Research Laboratory, Microelectronics Research Laboratories, NEC Corporation

• Samukawa Seiji

  Lsi Basic Research Laboratory Microelectronics Research Laboratories Nec Corporation

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