New Radical-Control Method for SiO_2 Etching with Non-Perfluorocompound Gas Chemistries
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概要
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To control radical generation in true etching or silicon dioxide, we propose a new radical control method using the iodofluorocarbon chemistries in ultra-high-frequency (UHF) plasma we developed. In the UHF plasma, the mean electron energy is about 2 eV and there are a small number of high-energy electrons. The plasma can only dissociate C-I bonds (2.0 eV) in the iodofluorocarbon plasma (CF_3I, C_2F_5I) and it mainly generates CF_3 and CF_2 radicals. The ratio of each radical density can then be precisely controlled by changing the ratio of the mixture of CF_3 I and C_2F_5I. As a result, etching selectivity and microloading effects are drastically improved. The iodofluorocarbon species are also alternatives to perfluorocarbon chemistries (PFCs) from an environmental standpoint.
- 社団法人応用物理学会の論文
- 1998-10-01
著者
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SAMUKAWA Seiji
LSI Basic Research Laboratory, Microelectronics Research Laboratories, NEC Corporation
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Samukawa Seiji
Lsi Basic Research Laboratory Microelectronics Research Laboratories Nec Corporation
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Tsuda Ken-ichiro
Fundamental Research Laboratories Nec Corporation
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Samukawa Seiji
Lsi Basic Research Laboratory Silicon Systems Research Laboratories Nec Corporation
関連論文
- New Ultra-High-Frequency Plasma Source for Large-Scale Etching Processes
- Dependence of Frequency and Pressure on Electron Energy Distribution Functionsin Low Pressure Plasma
- Ion and Neutral Temperatures in a Novel Ultrahigh-Frequency Discharge Plasma
- Time-Modulated Electron Cyclotron Resonance Plasma Discharge for Controlling the Polymerization in SiO_2 Etching
- New Radical-Control Method for SiO_2 Etching with Non-Perfluorocompound Gas Chemistries
- Doppler-Shifted Laser-Induced Fluorescence Diagnostics of an Ultrahigh-Frequency Discharge Plasma
- Highly Selective and Highly Anisotropic SiO_2 Etching in Pulse-Time Modulated Electron Cyclotron Resonance Plasma
- The Correlation between an Electric Field and the Metastable Chlorine Ion Density Distributions in an Ultrahigh-Frequency Plasma
- Doppler-Shifted Laser-Induced Fluorescence Diagnostics of an Ultrahigh-Frequency Discharge Plasma