Highly Selective and Highly Anisotropic SiO_2 Etching in Pulse-Time Modulated Electron Cyclotron Resonance Plasma

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概要

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• A 10-100 μs modulated electron cyclotron resonance (ECM) plasma is discharged to control the generation of reactive species in high-density, low-pressure plasma. The density ratio of CF_2 radicals to F atoms in the CHF_3 plasma correlates well with the pulse duration. This is because the generation of reactive species in the ECR plasma depends on time (10-100 μs). Moreover, we found that a collimated ion flux was generated in the pulsed plasma. This method achieves a high ratio of SiO_2 etching selectivity to Si etching and eliminates microloading effects during SiO_2 contact hole etching.

• 社団法人応用物理学会の論文
• 1994-04-30

著者

• SAMUKAWA Seiji

  LSI Basic Research Laboratory, Microelectronics Research Laboratories, NEC Corporation

• Samukawa Seiji

  Lsi Basic Research Laboratory Microelectronics Research Laboratories Nec Corporation

関連論文

• New Ultra-High-Frequency Plasma Source for Large-Scale Etching Processes
• Dependence of Frequency and Pressure on Electron Energy Distribution Functionsin Low Pressure Plasma
• Ion and Neutral Temperatures in a Novel Ultrahigh-Frequency Discharge Plasma
• Time-Modulated Electron Cyclotron Resonance Plasma Discharge for Controlling the Polymerization in SiO_2 Etching
• New Radical-Control Method for SiO_2 Etching with Non-Perfluorocompound Gas Chemistries
• Doppler-Shifted Laser-Induced Fluorescence Diagnostics of an Ultrahigh-Frequency Discharge Plasma
• Highly Selective and Highly Anisotropic SiO_2 Etching in Pulse-Time Modulated Electron Cyclotron Resonance Plasma
• The Correlation between an Electric Field and the Metastable Chlorine Ion Density Distributions in an Ultrahigh-Frequency Plasma
• Doppler-Shifted Laser-Induced Fluorescence Diagnostics of an Ultrahigh-Frequency Discharge Plasma

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