Dependence of Gate Oxide Breakdown Frequency on Ion Current Density Distributions during Electron Cyclotron Resonance Plasma Etching
スポンサーリンク
概要
- 論文の詳細を見る
According to the reduction of gate oxide thickness in Metal-Oxide-Semiconductor (MOS) devices, the gate oxide degradation caused by the stored change during Magnetized high-density plasma etching becomes a serious problem. The gate oxide degradation and the breakdown are brought about due to the nonuniform plasma radiation by the uneven magnetic field profile. Therefore, the flat equi-magnetic field profile suppresses the ate oxide degradation during electron cyclotron resonance (ECR) plasma etching.
- 社団法人応用物理学会の論文
- 1991-11-01
著者
関連論文
- Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
- Multi-Coil System for Electron Cyclcotron Resonance Plasma Generation
- Uniform Electron Cyclotron Resonance Plasma Generation for Precise ULSI Patterning
- Dependence of Electron Cyclotron Resonance Plasma Characteristics on Introduced Microwave Conditions
- Ion Current Density and Ion Energy Distributions at the Electron Cyclotron Resonance Position in the Electron Cyclotron Resonance Plasma
- Ion Energy Distributions at the Electron Cyclotron Resonance Position in Electron Cyclotron Resonance Plasma
- Dependence of ECR Plasma Etching Characteristics on Sub Magnetic Field and Substrate Position
- Roles of SiH_3 and SiH_2 Radicals in Particle Growth in rf Silane Plasmas
- Effects of Dilution Gases on Si Atoms and SiHx^^+ (X = 0-3) Ions in Electron Cyclotron Resonance SiH_4 Plasmas
- Effects of Thermal Annealing for Restoration of UV Irradiation Damage during Plasma Etching Processes
- Effects of CF_3I Plasma for Reducing UV Irradiation Damage in Dielectric Film Etching Processes
- Control of UV Radiation Damages for the High Sensitive CCD Image Sensor
- On-Wafer Monitoring of Vacuum-Ultraviolet Radiation Damage in High-Density Plasma Processes
- High-Efficiency Low Energy Neutral Beam Generation Using Negative Ions in Pulsed Plasma
- High-Efficiency Neutral-Beam Generation by Combination of Inductively Coupled Plasma and Parallel Plate DC Bias : Nuclear Science, Plasmas, Electric Dischanges
- Growth of Preferentially Oriented Microcrystalline Silicon Film Using Pulse-Modulated Ultrahigh-Frequency Plasma
- Time-Modulated Electron Cyclotron Resonance Plasma Discharge for Controlling the Polymerization in SiO_2 Etching
- Dependence of Electron Cyclotron Resonance Plasma Characteristics on Magnetic Field Profiles
- Dependence of Electron Cyclotron Resonance plasma Characteristics on Magnetic Field Profiles : Etching
- Dependence of Electron Cyclotron Resonance Plasma Characteristics on Magnetic Field Profiles
- Dependence of Gate Oxide Breakdown Frequency on Ion Current Density Distributions during Electron Cyclotron Resonance Plasma Etching
- 400 kHz Radio-Frequency Biased Electron Cyclotron Resonance Position Etching